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首页> 外文期刊>Journal of thermal stresses >ULTRA FAST LASER-INDUCED ELASTODYNAMICS IN SINGLE CRYSTALLINE SILICON PART II: NEAR-FIELD RESPONSE
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ULTRA FAST LASER-INDUCED ELASTODYNAMICS IN SINGLE CRYSTALLINE SILICON PART II: NEAR-FIELD RESPONSE

机译:单晶硅中的超快激光诱导的弹性动力学第二部分:近场响应

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摘要

The multi-time scale ultrafast laser model of axisymmetric geometry presented in Part I is validated with computed carrier densities and melting thresholds that agree well with published physical data. Transport phenomena initiated by femtoseconds heating including the spatial and temporal evolutions of electron and lattice temperatures and electron-hole carrier density are highly localized in both time and space. The temporal and spatial scales associated with the generation of thermal stress waves are significantly larger at tenths of nanoseconds and microns, respectively. Ultrashort laser pulse induced transverse stress waves are highly dispersive and characteristically of broadband, low amplitude, and extremely high frequency and power density contents. Near-field responses that precede the development of a full-blown plate wave are also localized in space with a power density magnitude on the order of 10~(13) Watts per cubic meters in volume.
机译:第一部分中介绍的轴对称几何形状的多时间尺度超快激光模型已通过计算得出的载流子密度和熔化阈值进行了验证,这些模型与公开的物理数据非常吻合。飞秒加热引发的传输现象在时间和空间上都高度局限,包括电子和晶格温度的时空演变以及电子-空穴载流子密度。与热应力波的产生有关的时间和空间尺度分别大到十分之一纳秒和微米。超短激光脉冲引起的横向应力波具有很高的色散性,具有宽带,低振幅以及极高的频率和功率密度含量的特点。在全盘状板波产生之前的近场响应也被定位在空间中,其功率密度量级为每立方米10〜(13)瓦。

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