• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching
【24h】

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

机译：硅蚀刻过程中和蚀刻后，氯等离子体与涂有氯化硅的反应器壁之间的相互作用

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate bias reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiClx (x = 1 – 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex “recycling” process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl3 sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.
机译：氯感应耦合等离子体（ICP）和涂有硅刻蚀产物的反应器壁之间的相互作用已通过俄歇电子能谱和视线质谱法使用旋转壁法进行了现场研究。在13.56 MHz，400 W ICP上蚀刻了安装在射频供电电极（-108 V dc自偏置）上的裸硅晶圆。蚀刻产物，以及由于放电管腐蚀而产生的一些氧气，在等离子反应器壁（包括旋转的基板表面）上沉积了Si-氯氧化物层。如果没有Si衬底偏压，先前沉积在Si衬底偏压下的壁上的层会与氯等离子体中的Cl原子发生反应，形成脱附，在等离子体中碎裂，粘在旋转壁上并有时反应的产物，并且然后解吸，并由质谱仪检测。除了在63、98、133和168处的质荷（m / e）信号（对应于SiClx（x = 1-4））外，许多m / e = 107、177、196的氯氧化硅碎片从似乎是从纺丝壁上解吸的主要产物中也观察到了212、231、247、275、291、294、307、329、345、361和392。结果表明，腐蚀产物的演变是一个复杂的“循环”过程，其中这些物质多次从壁上沉积和解吸，并在被质谱仪检测之前在等离子体中反复破碎。 SiCl3粘在壁上，并在暴露于氯等离子体后似乎至少解吸了几毫秒。与先前在不进行Si蚀刻的情况下进行的研究相反，在m / e = 70和72的信号明显不存在，表明该表面上的Cl很少或没有Langmuir-Hinshelwood复合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号