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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Ideally ordered 10 nm channel arrays grown by anodization of focused-ion-beam patterned aluminum
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Ideally ordered 10 nm channel arrays grown by anodization of focused-ion-beam patterned aluminum

机译:通过聚焦离子束图案化铝的阳极氧化工艺生长的理想有序10 nm通道阵列

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摘要

Arrays of ideally ordered alumina nanochannels with unprecedented ~10 nm pore size, 40-50 nm interpore spacing, and improved channel uniformity have been fabricated by anodizing an aluminum substrate with a guiding pattern on its surface. The pattern is an array of hexagonally close-packed concaves fabricated by focused ion beam direct sputtering; and its lattice constant is carefully matched to the conditions of the subsequent anodization process in order to achieve effective guiding in the growth of the nanochannels and therefore the ordering of an array.
机译:通过阳极氧化在其表面具有引导图案的铝基板,可以制造出具有理想的有序氧化铝纳米通道的阵列,这些纳米通道具有前所未有的〜10 nm的孔径,40-50 nm的孔间距以及改善的通道均匀性。图案是通过聚焦离子束直接溅射制成的六角形密堆积凹面的阵列。并且其晶格常数与后续阳极氧化工艺的条件仔细匹配,以实现对纳米通道生长的有效引导,从而实现阵列的有序化。

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