Electronic defect states at annealed metal/4H-SIC interfaces

S. Tumakha; S. H. Goss; L. J. Brillson; R. S. Okoiie

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Electronic defect states at annealed metal/4H-SIC interfaces

机译：退火金属/ 4H-SIC界面处的电子缺陷状态

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We have used low energy electron-excited nanoscale luminescence spectroscopy (LEEN) to study the formation of electronic surface states at metal/4H-SiC contacts. These junctions were formed using both low and high reactivity metals to study how the nature of interface chemical bonding affects the interface state formation. We observe evidence for the formation and removal of localized states at energies that have been associated with morphological SiC defects. Metals such as Au and Ag with no strong chemical reactivity exhibited the most pronounced changes. Conversely, chemically-reactive metals such as Ti and Ni exhibited only minor changes and only with high temperature annealing. These observations suggest that native defects rather then metal-specific chemical bonding dominate the interface electronic features.

机译：我们已经使用低能电子激发的纳米级发光光谱（LEEN）来研究金属/ 4H-SiC接触处电子表面态的形成。这些连接是使用低反应性金属和高反应性金属形成的，以研究界面化学键的性质如何影响界面态的形成。我们观察到了与形态学SiC缺陷相关的能量中局部状态的形成和去除的证据。没有强化学反应性的金属，如金和银，表现出最明显的变化。相反，化学反应性金属（例如Ti和Ni）仅表现出很小的变化，并且仅在高温退火的情况下表现出。这些观察结果表明，天然缺陷而不是金属特异性化学键主导了界面电子特征。

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《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2005年第2期|p.594-598|共5页
作者
S. Tumakha; S. H. Goss; L. J. Brillson; R. S. Okoiie;
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作者单位

Department of Electrical Engineering and Computer Science, The Ohio State University, 205 Dreese Lab, Columbus, Ohio 43210-1272;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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1. Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing [J] . Lee Jae-Gil, Kim Dong-Hwan, Eom Su-Keun, Journal of the Korean Physical Society . 2018,第1期

机译：具有金属后退火的Mo / SiO2 / 4H-SiC金属氧化物半导体的改善界面特性
2. Improved SiO_2/4H-SiC Interface Defect Density Using Forming Gas Annealing [J] . Stephan Wirths, Giovanni Alfieri, Alyssa Prasmusinto, Materials science forum . 2019,第期

机译：使用成型气体退火改善SiO_2 / 4H-SIC接口缺陷密度
3. Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing [J] . Liu Bingbing, Qin Fuwen, Wang Dejun Applied Surface Science . 2016,第Feba28期

机译：电子回旋共振氢氮混合等离子体预处理SiC表面并结合后氧化退火钝化SiO2 / 4H-SiC界面缺陷
4. Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal [C] . Mrinal K. Das, Brett A. Hull, Sumi Krishnaswami, International Conference on Silicon Carbide and Related Materials . 2006

机译：通过两个独立工艺生产的改进的4H-SIC MOS界面：金属增强氧化和1300°C无退火
5. Modeling the atomic and electronic structure of Metal-Metal, Metal-Semiconductor and Semiconductor-oxide interfaces. [D] . Hegde, Ganesh K. 2013

机译：对金属金属，金属半导体和半导体氧化物界面的原子和电子结构建模。
6. Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces [O] . Georges Hamaoui, Nicolas Horny, Zilong Hua, -1

机译：电子在金属-半导体和金属硅化物-半导体界面的热传递中的作用
7. Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate [O] . Choi Gahyun, Yoon Hoon Hahn, Jung Sungchul, 2016

机译：由4H-SiC衬底上的表面极化电荷驱动的具有薄界面间隔物的金属/ 4H-SiC结的肖特基势垒调制

Electronic defect states at annealed metal/4H-SIC interfaces

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