Gas-assisted focused ion beam etching characteristics of niobium

X. L. Fu; P. G. Li; A. Z. Jin; H. Y. Zhang; H. F. Yang; W. H. Tang

首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Gas-assisted focused ion beam etching characteristics of niobium

【24h】

Gas-assisted focused ion beam etching characteristics of niobium

机译：铌的气体辅助聚焦离子束刻蚀特性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The gas-assisted focused ion beam etching characteristics of niobium have been investigated systematically in I_2 and XeF_2 gas atmosphere, respectively. The effects of the etching parameters, such as: ion beam current, dwell time, overlap percentage and gas species, on the niobium etching rate and on the gas-assisted etching enhancement have been studied. It was found that the overlap percentage had little effect on the etching characteristics of niobium. It also showed that the I_2 radicals are more reactant with niobium than XeF_2 radicals, and to obtain maximum improvement from the gas-assisted etching process one needs to select a smaller ion beam current with a shorter beam dwell time.

机译：分别在I_2和XeF_2气体气氛中系统研究了铌的气体辅助聚焦离子束刻蚀特性。研究了离子束电流，停留时间，重合百分比和气体种类等腐蚀参数对铌腐蚀速率和气体辅助腐蚀增强的影响。发现重叠百分比对铌的蚀刻特性影响很小。研究还表明，I_2自由基比XeF_2自由基与铌的反应更多，并且要从气体辅助蚀刻工艺中获得最大的改善，需要选择更短的离子束电流和更短的束流停留时间。

著录项

来源
《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2005年第2期|p.585-587|共3页
作者
X. L. Fu; P. G. Li; A. Z. Jin; H. Y. Zhang; H. F. Yang; W. H. Tang;
展开▼
作者单位

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Gas-assisted etching of niobium with focused ion beam [J] . X.L. Fu, P.G. Li, A.Z. Jin, Microelectronic Engineering . 2005,第Mar期

机译：聚焦离子束气体辅助腐蚀铌
2. Development of Functional Surfaces on High-Density Polyethylene (HDPE) via Gas-Assisted Etching (GAE) Using Focused Ion Beams [J] . Sezen Meltem, Bakan Feray Microscopy and microanalysis: The official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada . 2015,第6期

机译：使用聚焦离子束通过气体辅助蚀刻（GAE）在高密度聚乙烯（HDPE）上开发功能性表面
3. Fabrication of microano-structures using focused ion beam implantation and XeF{sub}2 gas-assisted etching [J] . Z. W. Xu, F. Z. Fang, Y. Q. Fu, Journal of Micromechanics and Microengineering . 2009,第5期

机译：使用聚焦离子束注入和XeF {sub} 2气体辅助刻蚀制造微/纳米结构
4. Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching [C] . Ikuo Okada, NTT System Electronics Labs., Atsugi-shi, Photomask and X-Ray Mask Technology IV . 1997

机译：用气体辅助聚焦离子束蚀刻修复Ta吸收剂X射线掩模
5. Optical channel waveguide formation by focused ion beam induced selective mixing and wet chemical etching: Design, fabrication and characterization. [D] . Kumar, Mukesh. 1997

机译：通过聚焦离子束诱导的选择性混合和湿法化学蚀刻形成光通道波导：设计，制造和表征。
6. Combined Focused Electron Beam-Induced Deposition and Etching for the Patterning of Dense Lines without Interconnecting Material [O] . Sangeetha Hari, P. H. F. Trompenaars, J. J. L. Mulders, 2021

机译：结合聚焦的电子束诱导的沉积和蚀刻用于致密线的图案化而不互连材料
7. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications [O] . Alias Mohd Sharizal, Yang Yang, Ng Tien Khee, 2015

机译：使用化学气体辅助聚焦离子束的亚波长光栅光子应用增强了钙钛矿杂化钙钛矿的蚀刻，表面损伤恢复和亚微米图案化
8. Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam [R] . Hartley, F., Malek, C., Neogi, J. 2001

机译：通过气体辅助聚焦离子束快速进行高纵横比，高分辨率X射线掩模的原型设计

Gas-assisted focused ion beam etching characteristics of niobium

摘要

著录项

相似文献

相关主题

期刊订阅