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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties
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Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

机译：不同Al含量AlGaN / GaN异质结构中应变AlGaN层的结构表征及其对二维电子传输性能的影响

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摘要

Different Al content AlGaN/GaN two-dimensional-electron-gas (2DEG) structures were grown on 100-mm-diam sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The structural properties of AlGaN layers, such as alloy composition, layer thickness, tensile strain, in-plane stress, crystal quality, and band gap energy, were investigated in detail mainly by x-ray diffraction and spectroscopic ellipsometry. Correspondingly, the electron transport properties of these epilayers were theoretically as well as experimentally studied, taking into account the structural characterization results. Hall effect measurements showed that 2DEG density linearly increases with increasing Al content and that low-temperature 2DEG mobility largely decreases with the increase of Al content. The calculated results demonstrated that interface roughness scattering is largely enhanced with increasing Al content and has a strong impact on low-temperature 2DEG mobilities in high Al content samples. This is because the roughness of the interface between GaN and AlGaN layers increases with Al content. This calculated result is consistent with the experimental result that the surface of MOVPE-grown samples exhibited poor qualities with increasing Al content. The degradation of the surface and/or interface is associated with the increased strain in AlGaN layers.
机译：通过金属有机气相外延（MOVPE）在直径为100mm的蓝宝石衬底上生长了不同的Al含量AlGaN / GaN二维电子气（2DEG）结构。主要通过x射线衍射和椭圆偏振光谱法详细研究了AlGaN层的结构特性，例如合金成分，层厚度，拉伸应变，面内应力，晶体质量和带隙能。相应地，考虑到结构表征结果，对这些外延层的电子传输性质进行了理论和实验研究。霍尔效应测量表明，2DEG密度随Al含量的增加而线性增加，而低温2DEG迁移率随Al含量的增加而大大降低。计算结果表明，随着Al含量的增加，界面粗糙度散射会大大增强，并且对高Al含量样品中的低温2DEG迁移率具有强烈影响。这是因为GaN和AlGaN层之间的界面的粗糙度随着Al含量而增加。该计算结果与实验结果一致，即随着Al含量的增加，MOVPE生长的样品的表面表现出较差的质量。表面和/或界面的退化与AlGaN层中应变的增加有关。

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