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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow-k interconnects
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Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow-k interconnects

机译：双层侧壁势垒中的碳化硅基介电复合材料，用于Cu /多孔超低k互连

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摘要

Dielectric/metal bilayer diffusion barriers with different silicon carbide films (SiCO, SiCN, and SiC) were fabricated for use in Cu/porous low-k damascene interconnects. The bilayer sidewall barriers show significant performance improvements in terms of breakdown strength and leakage current characteristics compared with conventional physical vapor deposited metal barriers. SiC/Ta and SiCN/Ta bilayer barriers are good candidates for use in Cu/porous low-k damascene interconnects due to their superior electrical performance even after long-time thermal/electrical stress. However, the electrical characteristics of SiCO/Ta bilayer barrier showed a significant degradation after long-time thermal/electrical stress. This divergence may be attributed to the influence of the underlying dielectric layer on Ta texture in the bilayer barrier structure. The preferred α-phase Ta barrier was formed when deposited on SiCN or SiC, but the β-phase Ta was formed when deposited on SiCO or directly on porous low-k dielectric. The unstable oxygen content in porous low-k dielectric as well as the SiCO layer are likely to be responsible for the electrical degradation of the interconnects.
机译：制作了具有不同碳化硅膜（SiCO，SiCN和SiC）的介电/金属双层扩散势垒，用于Cu /多孔低k镶嵌互连。与常规的物理气相沉积金属阻挡层相比，双层侧壁阻挡层在击穿强度和漏电流特性方面显示出显着的性能改进。 SiC / Ta和SiCN / Ta双层势垒是铜/多孔低k大马士革互连中很好的候选材料，因为它们即使在长时间的热/电应力下仍具有出色的电性能。然而，长时间的热/电应力作用后，SiCO / Ta双层势垒的电特性显着下降。这种发散可以归因于下面的介电层对双层势垒结构中的Ta纹理的影响。当沉积在SiCN或SiC上时，会形成首选的α相Ta势垒，而沉积在SiCO上或直接在多孔低k介电层上时，会形成β相Ta势垒。多孔低k电介质以及SiCO层中不稳定的氧含量很可能是造成互连线电降解的原因。

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