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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Fabrication and characterization of InGaAlP/InGaP semiconductor circular ring lasers
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Fabrication and characterization of InGaAlP/InGaP semiconductor circular ring lasers

机译：InGaAlP / InGaP半导体圆环激光器的制备与表征

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摘要

We report the fabrication of a semiconductor circular ring lasers based on an InGaAlP/InGaP graded-index separate confinement heterostructure (GRIN-SCH) which attracted much attention for light sources in optical information processing systems such as a laser printer, compact disk player and optical link system. The dimensions of the circular ring cavity are 100 μm-250 μm in diameter, 5-10 μm width of the ridge waveguide, and a Y junction output coupler of 250 μm in length. An ultraviolet (UV) laser-assisted etching process and the two-layer photolithography process were developed for the fabrication of the circular ring cavity. The luminescence-current and spectrum characteristics of laser output showed a single-mode output operating at 698 nm and at threshold current about 60 mA. The reports showed that the pattern definition by the combination of UV laser-assisted etching, and the two-layer photolithography process was capable of complex optoelectronic integrated device processing.
机译：我们报告了基于InGaAlP / InGaP梯度折射率分离限制异质结构（GRIN-SCH）的半导体圆环激光器的制造，该激光器在光学信息处理系统（如激光打印机，光盘播放器和光学系统）中引起了广泛关注链接系统。圆环腔的尺寸为直径为100μm-250μm，脊形波导的宽度为5-10μm，长度为250μm的Y结输出耦合器。开发了紫外（UV）激光辅助蚀刻工艺和两层光刻工艺来制造圆环腔。激光输出的发光电流和光谱特性显示出在698 nm和约60 mA的阈值电流下工作的单模输出。报告显示，通过结合紫外线激光辅助蚀刻和两层光刻工艺来进行图案定义，能够进行复杂的光电集成器件加工。

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