Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method

Yonghwan Ryu; Kijung Yong

首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method

【24h】

Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method

机译：简单加热法对环境气体对SiC纳米线直接生长的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A large quantity of highly uniform SiC nanowires was directly synthesized from Si substrates using a thermal heating method. The atomic structure, morphology, and composition of the SiC nanowires were strongly dependent on the ambient gases (Ar,N_2) used during nanowire growth. The nanowires grown in Ar were coated with amorphous carbon layers while the nanowires grown in N_2 had no coating layers. Also, nitrogen and oxygen were incorporated only into SiC nanowires grown in N_2. A proposed model for the role of ambient gases in the SiC nanowire growth is discussed.

机译：使用热加热方法直接从Si衬底合成了大量高度均匀的SiC纳米线。 SiC纳米线的原子结构，形态和组成在很大程度上取决于纳米线生长过程中使用的环境气体（Ar，N_2）。在Ar中生长的纳米线涂有非晶碳层，而在N_2中生长的纳米线则没有涂层。而且，氮和氧仅被掺入到在N_2中生长的SiC纳米线中。讨论了关于环境气体在SiC纳米线生长中的作用的拟议模型。

著录项

来源
《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2005年第5期|p.2069-2072|共4页
作者
Yonghwan Ryu; Kijung Yong;
展开▼
作者单位

Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Structural characterization of β-SiC nanowires synthesized by direct heating method [J] . Yunho Baek, YongHwan Ryu, Kijung Yong Materials science & engineering. C, Biomimetic and supramolecular systems . 2006,第5a7期

机译：直接加热法合成β-SiC纳米线的结构表征
2. Growth mechanism of twinned SiC nanowires synthesized by a simple thermal evaporation method [J] . Chen J., Pan Y., Wu R. Physica, E. Low-dimensional systems & nanostructures . 2010,第9期

机译：简单热蒸发法合成孪晶SiC纳米线的生长机理
3. A simple method to prevent hard X-ray-induced preheating effects inside the cone tip in indirect-drive fast ignition implosions [J] . Liu Dongxiao, Shan Lianqiang, Zhou Weimin, Physics of plasmas . 2016,第6期

机译：一种防止间接驱动快速点火内爆中锥形尖端内部硬X射线引起的预热效应的简单方法
4. Growth of tungsten oxide nanowires using simple thermal heating [C] . Chen, G.Y., Stolojan, Emerging Technologies -Nanoelectronics, 2006 IEEE Conference on . 2006

机译：使用简单的加热方法生长氧化钨纳米线
5. Vapor-liquid-solid growth of semiconductor SiC nanowires for electronics applications [D] . Kulandaivelu Govindarajulu Thirumalai, Rooban Venkatesh 2013

机译：电子应用半导体SiC纳米线的汽-液-固生长
6. SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black [O] . Feng-Lei Wang, Li-Ying Zhang, Ya-Fei Zhang 2009

机译：通过快速加热SiO和电弧放电等离子体预处理的炭黑的混合物合成SiC纳米线
7. Study on the Preparation and Micro-structural Characterization of SiC Nanowires Obtained by Direct Microwave Heating [O] . Shan Huanga, Ji-gang Wangb, Song Liu, 2016

机译：直接微波加热制备siC纳米线的制备及微观结构表征
8. Effects of ambient background gases on YBCO plume propagation under film growth conditions: Spectroscopic, ion probe, and fast photographic studies [R] . Geohegan, D. B. 1991

机译：在膜生长条件下环境背景气体对YBCO羽流传播的影响：光谱，离子探针和快速摄影研究

Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method

摘要

著录项

相似文献

相关主题

期刊订阅