...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics
【24h】

As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics

机译：具有界面氧化物并与双极型器件特性相关的掺杂多晶硅发射极

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A detailed investigation of in situ-doped polysilicon emitters with interfacial oxide employed in implanted-base Si bipolar junction and epitaxial-base silicon/germanium (SiGe) heterojunction bipolar transistors is presented. In order to tune and control transistor parameters such as current amplification we modify the poly/monocrystalline silicon interface sandwiched between the emitter polysilicon and the base substrate or epitaxy. Various types of interface oxidation were examined and correlated to bipolar device data. We profoundly studied subnanometer silicon oxide growth by rapid thermal oxidation, low-pressure furnace oxidation, and chemical oxidation. Also a combination of thin chemically grown oxides with a thermal postoxidation was characterized. We correlate the oxide thickness to transistor parameters such as current amplification β. Also, the influence of As-enhanced oxide breakup during different emitter anneals as well as the dependence on annealing parameters on β was studied.
机译：提出了对在注入基极硅双极结和外延基硅/锗（SiGe）异质结双极晶体管中使用的具有界面氧化物的原位掺杂多晶硅发射极的详细研究。为了调整和控制晶体管参数（例如电流放大），我们修改了夹在发射极多晶硅和基础衬底或外延之间的多晶硅/单晶硅界面。检查了各种类型的界面氧化并将其与双极性器件数据相关联。我们通过快速热氧化，低压炉氧化和化学氧化深入研究了亚纳米氧化硅的生长。还表征了薄的化学生长氧化物与热后氧化的组合。我们将氧化物厚度与晶体管参数（例如电流放大率β）相关联。此外，研究了不同发射极退火过程中As增强氧化物分解的影响以及对β退火参数的依赖性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号