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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics
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X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics

机译：X射线反射法和X射线荧光监测高k栅极电介质的原子层沉积过程

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摘要

This work introduces inline x-ray fluorescence (XRF) and x-ray reflectometry (XRR) metrology tools to aid the process development of atomic layer deposition on high-k dielectric films. In this approach, XRR monitors the deposition rate of the thickness and identifies the transition from the three-dimensional to the two-dimensional growth regime. XRF is used to monitor the atomic deposition rate. The interpretation of XRR result is verified with transmission electron microscopy (TEM) and Auger electron spectroscopy. Unlike the conventional approach using Rutherford backscattering to monitor deposition rate and TEM to monitor thickness, this proposed scheme is noninvasive and does not require any sample preparation. In addition, the inline approach prevents exposing the film to a nonproduction grade environment and avoids the potential growth of the high-k interface or degradation of the film during the measurement.
机译：这项工作介绍了在线X射线荧光（XRF）和X射线反射仪（XRR）计量工具，以帮助开发在高k介电膜上沉积原子层的工艺。在这种方法中，XRR监视厚度的沉积速率，并确定从三维生长方式到二维生长方式的过渡。 XRF用于监视原子沉积速率。 XRR结果的解释已通过透射电子显微镜（TEM）和俄歇电子能谱验证。与使用卢瑟福反向散射监测沉积速率和使用TEM监测厚度的常规方法不同，此提议的方案是非侵入性的，不需要任何样品制备。此外，在线方法可防止将胶片暴露于非生产级环境，并避免了高k界面的潜在增长或在测量过程中胶片的降解。

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