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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Modified three terminal charge pumping technique applied to vertical transistor structures
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Modified three terminal charge pumping technique applied to vertical transistor structures

机译:改进的三端电荷泵技术应用于垂直晶体管结构

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摘要

Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) have evolved into dominant members in the power transistor family. Reliability issues continue to be a major concern, as economic requirements drive towards miniaturization, and higher power ratings for these devices. The charge pumping method offers a simple, direct and powerful way of assessing interface damage for planar structures. Absence of an independent substrate contact in the vertical power structure implies that conventional charge pumping, which requires a substrate contact as well as three additional contacts to the remaining terminals of the MOSFETs, cannot be applied directly to these devices. In this article, we propose an adaptation of the charge pumping technique that enables its application to three terminal devices, in general. The modified form of charge pumping was applied to assess effects of Fowler-Nordheim stressing on production level U-shaped trench-gated MOSFETs. A good correlation between transfer characteristic measurements and the proposed method has been observed.
机译:垂直金属氧化物半导体场效应晶体管(MOSFET)已经发展成为功率晶体管系列的主要成员。可靠性问题一直是主要关注的问题,因为经济要求推动了这些设备的小型化和更高的额定功率。电荷泵方法为评估平面结构的界面损坏提供了一种简单,直接且功能强大的方法。垂直功率结构中没有独立的衬底触点意味着需要衬底触点以及到MOSFET其余端子的三个附加触点的常规电荷泵不能直接应用于这些器件。在本文中,我们提出了一种电荷泵技术的改编方案,该技术可使它通常应用于三个终端设备。修改后的电荷泵形式用于评估Fowler-Nordheim应力对生产水平的U型沟槽栅MOSFET的影响。已经观察到传递特性测量值与所提出的方法之间具有良好的相关性。

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