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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Reduction of the initial defect density and improvement of the reliability of Cu/low-k structures by a methylating treatment
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Reduction of the initial defect density and improvement of the reliability of Cu/low-k structures by a methylating treatment

机译：通过甲基化处理降低初始缺陷密度并提高Cu / low-k结构的可靠性

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摘要

The reliability of Cu/low-k structures after a methylating treatment has been studied. The lifetime increases for structures that have undergone the treatment and the effective k is also reduced. The lifetime improvement is believed to be due to the reduction of the defect density at the trench sidewalls. A simple percolation model shows that if there are existing defects at the trench interface, then percolation requires fewer additional defects. A reliability criterion of 1.5 C/cm~2 shows that the methylating treatment decreases the defect density by a factor of 5. The energy density of the capacitor, just before failure, was calculated from the current values just before failure and the values are comparable with adhesion energies of known hard mask materials. The final failure occurs at the top horizontal interface with delamination and copper penetration.
机译：研究了甲基化处理后Cu / low-k结构的可靠性。经过处理的结构的寿命增加，有效k也减小。认为寿命的提高归因于沟槽侧壁处的缺陷密度的降低。一个简单的渗流模型表明，如果沟槽界面处存在缺陷，则渗流需要较少的附加缺陷。 1.5 C / cm〜2的可靠性标准表明，甲基化处理将缺陷密度降低了5倍。刚发生故障之前，电容器的能量密度是根据刚发生故障之前的电流值计算得出的，并且该值可比具有已知硬掩模材料的粘附能。最终故障发生在顶部水平界面处，并发生分层和铜渗透。

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