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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Shutter transients during solid-source epitaxy
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Shutter transients during solid-source epitaxy

机译：固体源外延期间的快门瞬变

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摘要

Effusion cells are commonly used in solid-source molecular beam epitaxy for evaporation of the source materials. A prominent inaccuracy during effusion cell operation is strong flux transients after shutter opening. We have studied the temperature and time dependent beam fluxes of effusion cells filled with the group III elements indium, aluminum, and gallium. A flux reduction due to the shutter transient up to 33% with time constants ranging from 25 to 100 s is observed. A simple model of the shutter-transient behavior is proposed that well reproduces major features of the experiments. As a key point, we do not model the effusion cell simply as a Knudsen cell, but assume instead more realistic Langmuir evaporation. Our calculation results establish that heat loss due to thermal radiation from the source material surface is responsible for the shutter transient. Two applications are presented. First the calibration of beam fluxes under consideration of the shutter transient and second a technique for the compensation of the shutter transient by an optimized temperature control.
机译：固相分子束外延中通常使用渗出池来蒸发原料。积液池操作过程中一个突出的不准确之处是百叶窗打开后的强通量瞬变。我们已经研究了填充有III族元素铟，铝和镓的积液池的温度和时间相关束流。观察到由于快门瞬态引起的磁通量减少高达33％，时间常数范围为25到100 s。提出了一个简单的快门瞬态行为模型，该模型很好地再现了实验的主要特征。关键是，我们不仅仅将积液池建模为Knudsen池，而是假设更逼真的Langmuir蒸发。我们的计算结果表明，源材料表面的热辐射造成的热损失是造成快门瞬变的原因。介绍了两个应用程序。首先，在考虑快门瞬变的情况下校准光束通量，其次是通过优化的温度控制来补偿快门瞬变的技术。

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