...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors
【24h】

120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors

机译：120nm T形Mo / Pt / Au栅AlGaN / GaN高电子迁移率晶体管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We fabricated 120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates. The gate leakage current I_(gs) of the Mo/Pt/Au-gate HEMT at a gate-source voltage V_(gs) of -5 V was as much as five orders of magnitude lower than that of the Ni/Pt/Au-gate HEMT under the as-deposited condition. The off-state breakdown voltage, defined as the gate-source voltage when the gate-source current is -1 mA/mm, was about -60 V for the Mo/Pt/Au-gate HEMT. These dc performances are comparable to those of the Ni/Pt/Au-gate HEMTs in which the Schottky contacts were improved with rapid thermal annealing at 500℃. The Mo/Pt/Au-gate HEMTs also exhibited good rf performance without RTA. The cutoff frequency f_T was more than 50 GHz and the maximum oscillation frequency f_(max) was about 100 GHz.
机译：我们在蓝宝石衬底上制造了120 nm T形Mo / Pt /金门AlGaN / GaN高电子迁移率晶体管（HEMT）。 Mo / Pt / Au栅极HEMT在-5V的栅极-源极电压V_（gs）下的栅极泄漏电流I_（gs）比Ni / Pt / Au的栅极泄漏电流I_（gs）低五个数量级在沉积条件下对HEMT进行门控。对于Mo / Pt / Au栅极HEMT，截止状态击穿电压（定义为栅极-源极电流为-1 mA / mm时的栅极-源极电压）约为-60V。这些直流性能与Ni / Pt / Au栅极HEMT的直流性能相当，后者的肖特基接触在500℃下进行了快速的热退火处理，从而得到了改善。 Mo / Pt / Au门HEMT在没有RTA的情况下也表现出良好的射频性能。截止频率f_T大于50 GHz，最大振荡频率f_（max）约为100 GHz。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号