Effect of film thickness on the ferroelectric properties of Pb(Zr_(0.2)Ti_(0.8))O_3 thin films for nano-data storage applications

Woo-Sung Lee; Kyoung-Chan Ahn; Soon-Gil Yoon; Chang Soo Kim

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Effect of film thickness on the ferroelectric properties of Pb(Zr_(0.2)Ti_(0.8))O_3 thin films for nano-data storage applications

机译：膜厚对纳米数据存储应用中Pb（Zr_（0.2）Ti_（0.8））O_3薄膜铁电性能的影响

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摘要

Epitaxial Pb(Zr_(0.2)Ti_(0.8))O_3 (PZT) films with various thicknesses were prepared on an epitaxial SrRuO_3(SRO) bottom electrode grown on SrTiO_3 (STO) with atomically flat surface. The PZT films with a rms roughness of 0.2-0.3 nm exhibit a typical square-shaped P-E hysteresis loop, which has the P_r of approximately 60 μC/cm~2. The leakage current density of the films increases with decreasing film thickness and the 22-nm-thick PZT films have a leakage current density of approximately 10~(-5) A/cm~2 at -1 Ⅴ.

机译：在生长在原子表面平坦的SrTiO_3（STO）上的外延SrRuO_3（SRO）底部电极上制备了各种厚度的外延Pb（Zr_（0.2）Ti_（0.8））O_3（PZT）膜。均方根粗糙度为0.2-0.3 nm的PZT薄膜具有典型的方形P-E磁滞回线，其P_r约为60μC/ cm〜2。膜的漏电流密度随膜厚度的减小而增加，厚度为22nm的PZT膜在-1Ⅴ时的漏电流密度约为10〜（-5）A / cm〜2。

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来源
《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2005年第5期|p.1901-1904|共4页
作者
Woo-Sung Lee; Kyoung-Chan Ahn; Soon-Gil Yoon; Chang Soo Kim;
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作者单位

Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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5. New modalities of strain-based engineering of ferroelectrics: Domain structure and properties of PbZr1?xTixO3 thin films [D] . Agar, Joshua C. 2015

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Effect of film thickness on the ferroelectric properties of Pb(Zr_(0.2)Ti_(0.8))O_3 thin films for nano-data storage applications

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