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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly
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Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly

机译：探索金属蒸气真空电弧注入的铜，以催化TaN / FSG / Si组件上的化学镀铜膜

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This work attempted to implant a Cu catalyst into a TaN (500 A)/FSG (1200 A)/Si assembly using a metal vapor vacuum are ion implanter. The range of the copper dose was between 5.0X 10~(15) and 1.0 X 10~(17) cm~(-2) and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer (SIMS), x-ray diffraction (XRD), and field emission scanning electron microscope (FESEM). The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu(111) preferred orientation. An excellent gap filling in a 0.2-μm-width (AR 7:1) trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 μΩcm after annealing at 500℃ for 1.5 h under an atmosphere of 10%H_2-90%N_2.
机译：这项工作试图使用金属蒸汽真空离子注入机将Cu催化剂注入TaN（500 A）/ FSG（1200 A）/ Si组件中。铜剂量范围为5.0×10〜（15）至1.0×10〜（17）cm〜（-2），加速电压范围为30〜50kV。随后，用化学镀铜膜沉积空白和图案化的样品。通过二次离子质谱仪（SIMS），X射线衍射（XRD）和场发射扫描电子显微镜（FESEM）对样品进行整体表征。薄层电阻通过四点探针测量。建立了SIMS深度剖面与离子能量之间的明显关系。 XRD光谱还表明，化学镀铜膜具有强烈的Cu（111）优选取向的特征峰。 FESEM观察到在0.2μm宽度的沟槽/通孔（AR 7：1）中填充了出色的间隙。在10％H_2-90％N_2的气氛下于500℃退火1.5h后，样品的薄层电阻率降至1.93μΩcm。

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