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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Rutherford backscattering analysis of GaN decomposition
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Rutherford backscattering analysis of GaN decomposition

机译：GaN分解的卢瑟福背散射分析

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摘要

The decomposition of GaN at temperatures ranging from 500℃ to 1100℃ has been studied by Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The development of a surface defect peak is a consequence of preferential N_2 loss at elevated temperatures. Additionally, broadening of the defect peak at 1100℃, corresponding to a damage depth of approximately 0.25 μm beneath the surface, can be attributed to the diffusion of defects from the interface. At such temperatures, severe roughening of the surface is observed through AFM scans, which also correlated well with the damage depths estimated from RBS spectra. Nevertheless, Ga droplet formation is not detected from our samples as verified by XPS. Our results show that GaN remains thermally stable in N_2 up to 900℃. At higher temperatures, significant decomposition occurs and gives rise to degradation to the structural and morphological properties of the film.
机译：通过卢瑟福背散射（RBS），X射线光电子能谱（XPS）和原子力显微镜（AFM）研究了GaN在500℃至1100℃温度下的分解。表面缺陷峰的产生是在高温下优先N_2损失的结果。此外，缺陷峰在1100℃处变宽，对应于表面下方约0.25μm的损伤深度，可归因于缺陷从界面的扩散。在这样的温度下，通过AFM扫描观察到表面严重粗糙，这也与RBS光谱估计的损伤深度密切相关。然而，通过XPS验证，未从我们的样品中检测到Ga液滴的形成。我们的结果表明，GaN在高达900℃的N_2中仍保持热稳定。在较高的温度下，会发生明显的分解，并导致薄膜的结构和形态性能下降。

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