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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge_xSi_(1-x) buffer layers
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Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge_xSi_(1-x) buffer layers

机译：通过弛豫渐变的Ge_xSi_（1-x）缓冲层在Si基板上制造的改进的室温连续波GaAs / AlGaAs和InGaAs / GaAs / AlGaAs激光器

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摘要

Improved GaAs/AlGaAs quantum well lasers were fabricated with longer lifetimes, higher efficiencies, and lower threshold current densities than previously reported devices on Ge/GeSi relaxed graded buffers on Si substrates. Uncoated broad-area lasers operated continuously at 858 nm with a differential quantum efficiency of 0.40 and a threshold current density of 269 A/cm~2. Similar devices fabricated on GaAs substrates demonstrated nearly identical performance. Operating lifetimes on Si substrates were nearly 4 h, a 1 order of magnitude improvement over previous devices. In addition, strained InGaAs quantum well lasers have been operated continuously at room temperature on Ge/GeSi/Si substrates with a differential quantum efficiency of 0.26 and a threshold current density of 700 A/cm~2. Electroluminescence analyses of the failure behavior of both types of devices have suggested that recombination-enhanced defect reactions are limiting laser lifetime on Si substrates.
机译：改进的GaAs / AlGaAs量子阱激光器的制造寿命比以前报道的在Si衬底上的Ge / GeSi弛豫渐变缓冲器上的器件更长，寿命更长，效率更高，阈值电流密度更低。未镀膜的广域激光器在858 nm处连续工作，其差分量子效率为0.40，阈值电流密度为269 A / cm〜2。在GaAs衬底上制造的类似器件表现出几乎相同的性能。硅衬底上的工作寿命接近4小时，比以前的器件提高了一个数量级。此外，应变InGaAs量子阱激光器已在室温下在Ge / GeSi / Si衬底上连续工作，其差分量子效率为0.26，阈值电流密度为700 A / cm〜2。对两种类型器件的故障行为进行电致发光分析表明，复合增强的缺陷反应限制了Si衬底上的激光寿命。

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