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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Critical dimension control of a plasma etch process by integrating feedforward and feedback run-to-run control
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Critical dimension control of a plasma etch process by integrating feedforward and feedback run-to-run control

机译：通过集成前馈和反馈运行间控制来控制等离子体蚀刻工艺的关键尺寸

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摘要

In this article, we have derived a run-to-run (R2R) control design technique that integrates feedforward and feedback control on the etch process. The purpose is to minimize the effect of an oxygen flow disturbance during the resist trim on the polysilicon critical dimension (CD) after the main etch. The R2R controller manipulates the resist trim time based on feedforward measurements of the resist CD at the end of the lithography and feedback measurements from polysilicon CD at the end of the etch process. The purpose of the feedforward measurement is to adjust the resist trim time using a model of the relation between trim time, resist CD before the resist trim and polysilicon CD after the main etch. The purpose of the feedback measurement is to adjust this model to compensate for the oxygen flow disturbance during the resist trim. The resulting controller is called feedforward/feedback (FF/FB) controller. The FF/FB controller is tested using simulations and experiments conducted on an etch tool manufactured by Lam Research. The simulations and experimental results show that the FF/FB controller attenuates linear drift and shift in the polysilicon CD caused by the oxygen flow disturbance. Moreover, the results quantify the significant benefit of integrating feedforward and feedback control in addition to only using a feedforward control in minimizing the polysilicon CD deviations from the etch target.
机译：在本文中，我们推导了运行到运行（R2R）控制设计技术，该技术在蚀刻过程中集成了前馈和反馈控制。目的是使在主蚀刻之后在抗蚀剂修整期间氧气流扰动对多晶硅临界尺寸（CD）的影响最小。 R2R控制器根据光刻结束时抗蚀剂CD的前馈测量值和蚀刻过程结束时来自多晶硅CD的反馈测量值来控制抗蚀剂修整时间。前馈测量的目的是使用修整时间，抗蚀剂修整之前的抗蚀剂CD和主蚀刻后的多晶硅CD之间的关系模型来调整抗蚀剂修整时间。反馈测量的目的是调整该模型，以补偿抗蚀剂修整期间的氧气流动干扰。结果控制器称为前馈/反馈（FF / FB）控制器。使用在Lam Research制造的蚀刻工具上进行的模拟和实验对FF / FB控制器进行了测试。仿真和实验结果表明，FF / FB控制器减弱了氧气流扰动引起的多晶硅CD的线性漂移和移位。此外，除了将前馈控制用于使多晶硅CD与蚀刻目标的偏差最小之外，结果还量化了集成前馈和反馈控制的显着优势。

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