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首页> 外文期刊>Journal of Vacuum Science & Technology >Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene
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Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

机译：SiO2负载剥离石墨烯上对六苯基的温度依赖性生长形态

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摘要

The growth of small conjugated molecules on graphene is of increasing interest, since the latter bears the potential to serve as a transparent electrode for organic solar cells and light emitting diodes. Here, parahexaphenyl thin films have been grown by hot wall epitaxy on SiO2 supported exfoliated graphene. The arising morphologies—studied by atomic force microscopy—exhibit a strong dependence on deposition temperature. At temperatures from 280 K–333 K, islands consisting of almost upright standing molecules and needles composed from lying molecules coexist on the graphene flake. Between 363 and 423 K solely needles—consisting of lying molecules—are present on the graphene. The needles form well-ordered networks with relative orientation angles of ∼30°, ∼60°, and ∼90° reflecting the symmetry of the graphene substrate.
机译：小共轭分子在石墨烯上的生长越来越受到关注，因为后者具有用作有机太阳能电池和发光二极管的透明电极的潜力。在这里，对六苯基薄膜已经通过热壁外延生长在SiO2负载的脱落石墨烯上。通过原子力显微镜研究得出的形貌显示出对沉积温度的强烈依赖性。在280 K至333 K的温度下，由几乎直立的分子组成的岛和由说谎的分子组成的针共存于石墨烯薄片上。石墨烯上仅存在363至423 K之间的针，该针由说谎的分子组成。针形成有序网络，相对取向角约为30°，60°和90°，反映了石墨烯基材的对称性。

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