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首页> 外文期刊>Journal of Vacuum Science & Technology >Growth of high quality ZnO thin films with a homonucleation on sapphire
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Growth of high quality ZnO thin films with a homonucleation on sapphire

机译：在蓝宝石上生长均质成核的高质量ZnO薄膜

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摘要

ZnO thin films were epitaxially grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. A low temperature homonucleation ZnO layer was found crucial at the interfacial region to absorb the defects formed by the lattice mismatch between the sapphire and ZnO, resulting in a smooth surface that enables smooth 2D epitaxial growth. High quality ZnO films were achieved after careful optimization of critical growth conditions: the sequence of Zn and O source shutters, growth temperature for both the ZnO nucleation and growth layer, and Zn/O ratio. Oxygen plasma pretreatment was not applied prior to the growth, thus shortening the growth time and reducing oxidation of the metallic sources. Resultant epitaxial ZnO films on sapphire demonstrated a root-mean-square surface roughness of 0.373 nm for 1 μm × 1 μm atomic force microscope images with clear hexagonal structure and terrace steps. The x-ray diffraction full width at half maximum (FWHM) for ω and ω-2θ ZnO (0002) triple-crystal rocking curves were measured to be 13 and 26 arc/s, respectively. This FWHM value is lower than any reported to date in the literature, with ω and ω-2θ values indicating excellent coherence of the epitaxial layer along the interface and the growth direction, accordingly. These x-ray diffraction and surface roughness values are lower than those obtained using common nucleation layers such as MgO, indicating that growth with ZnO nucleation layers on sapphire may lead to higher quality electrical and optical devices.
机译：通过等离子辅助分子束外延在c面蓝宝石衬底上外延生长ZnO薄膜。发现在界面区域，低温均匀成核的ZnO层对于吸收由蓝宝石和ZnO之间的晶格失配所形成的缺陷至关重要，从而形成了一个光滑的表面，可以进行平滑的2D外延生长。在精心优化了关键的生长条件之后，即可获得高质量的ZnO薄膜：Zn和O源遮板的顺序，ZnO成核和生长层的生长温度以及Zn / O比。在生长之前不进行氧等离子体预处理，因此缩短了生长时间并减少了金属源的氧化。所得蓝宝石上的外延ZnO膜在1μm×1μm原子力显微镜图像上均具有0.373 nm的均方根表面粗糙度，具有清晰的六边形结构和阶跃台阶。 ω和ω-2θZnO（0002）三晶摇摆曲线的X射线半峰全宽（FWHM）分别测得为13和26 arc / s。该FWHM值低于文献中迄今报道的任何值，因此，ω和ω-2θ值表明沿界面和生长方向的外延层的优异的相干性。这些X射线衍射和表面粗糙度值低于使用普通成核层（如MgO）获得的值，表明蓝宝石上ZnO成核层的生长可能导致更高品质的电气和光学设备。

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