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首页> 外文期刊>Journal of Vacuum Science & Technology >Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors
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Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

机译：质子辐照对AlGaN / GaN高电子迁移率晶体管的直流性能的影响

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摘要

The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 × 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility, and sheet carrier concentration at doses below 2 × 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 × 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.
机译：研究了高能质子辐照剂量对直流性能以及AlGaN / GaN高电子迁移率晶体管（HEMT）的漏极电压阶跃应力的临界电压的影响，以评估AlGaN / GaN HEMT在太空应用中的可行性，需要承受各种辐射。用5 MeV的固定能量对质子辐照HEMT，剂量从10 9 到2×10 14 cm -2 。对于直流特性，当剂量低于2×10 13 cm -2时，饱和漏极电流（IDSS），跨导（gm），电子迁移率和薄层载流子浓度的衰减最小，而在2×10 14 cm -2 。在相同剂量条件下，观察到漏极击穿电压（VBR）增加了37％，临界电压（Vcri）增加了45％。漏极击穿电压和临界电压的改善归因于耗尽区的改变，这是由于在以更高剂量照射之后引入了更高密度的缺陷。

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