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首页> 外文期刊>Journal of Vacuum Science & Technology >Tuning the electronic states of individual Co acceptors in GaAs
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Tuning the electronic states of individual Co acceptors in GaAs

机译：调整GaAs中单个Co受体的电子状态

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摘要

Scanning tunneling microscope studies of individual impurities in semiconductors explore challenges associated with future nanoscale electronics and can provide insight into how new materials properties such as ferromagnetic ordering arise from impurity interactions. Atomic manipulation and tunneling spectroscopy were employed to characterize and control the acceptor states of Co atoms substituted for Ga in the GaAs(110) surface. Three states were observed whose appearance in tunneling spectra was sensitive to the tip position within the acceptor complex. The energy of these states did not follow bending of the host bands due to the tip-induced electric field, but did respond to the Coulomb potential of nearby charged defects, such as As vacancies. By applying voltage pulses with the scanning tunneling microscope tip, the vacancies could be positioned on the surface, thus enabling tunable control over the Co acceptor states.
机译：扫描隧道显微镜对半导体中各个杂质的研究探索了与未来纳米级电子器件相关的挑战，并可以提供洞察如何通过杂质相互作用产生新材料特性（如铁磁有序）的信息。原子操纵和隧穿光谱用于表征和控制在GaAs（110）表面上取代Ga的Co原子的受体状态。观察到三种状态，其在隧穿光谱中的出现对受体配合物中的尖端位置敏感。这些状态的能量没有由于尖端感应电场而跟随主带的弯曲，而是对附近的带电缺陷（例如，空位）的库仑势作出了响应。通过用扫描隧道显微镜尖端施加电压脉冲，可以将空位定位在表面上，从而实现对Co受体状态的可调控制。

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