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首页> 外文期刊>Journal of Vacuum Science & Technology >Atom probe tomography of AlInN/GaN HEMT structures
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Atom probe tomography of AlInN/GaN HEMT structures

机译：AlInN / GaN HEMT结构的原子探针层析成像

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摘要

The authors report a correlated study of the atom probe tomography (APT) of lattice matched AlInN/GaN and strained AlGaN/GaN high electron mobility transistor structures, before and after exposure to 60Co irradiation. The AlInN/GaN exhibited a decrease in carrier density while the AlGaN/GaN was found to be more radiation tolerant. Analysis of the APT data revealed that the buried interface near the channel exhibited a much larger increase in isosurface roughness at the AlInN/GaN than at the AlGaN/GaN interfaces. This is believed to contribute to the scattering of carriers out of the channel, and the resulting deterioration of the charge transport characteristics. A proxigram analysis showed that the observed increased roughness at the AlInN/GaN heterointerface was not concurrent with a significant change in its diffuseness.
机译：作者报告了在暴露于 60 Co辐照之前和之后，晶格匹配的AlInN / GaN和应变AlGaN / GaN高电子迁移率晶体管结构的原子探针层析成像（APT）的相关研究。 AlInN / GaN表现出了载流子密度的降低，而发现AlGaN / GaN具有更高的耐辐射性。对APT数据的分析表明，通道附近的埋入式界面在AlInN / GaN上的等值表面粗糙度比在AlGaN / GaN界面上的等值面粗糙度增加得多。据信这有助于载流子从沟道中飞散，并导致电荷传输特性的恶化。图表分析表明，在AlInN / GaN异质界面处观察到的粗糙度增加与其扩散度的显着变化不同时发生。

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