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首页> 外文期刊>Journal of Vacuum Science & Technology >Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage
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Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage

机译：优化电子束光刻设备以在10 kV加速电压下快速大面积写入

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摘要

Electron beam lithography (EBL) is a maskless lithography technique used in numerous applications for fabrication of ultrahigh-resolution photolithography masks. The main disadvantage of EBL is that it is time-consuming, requiring the pattern to be written in a successive fashion. Various approaches are used to lower the write time. Throughput-oriented EBL instruments used in industrial applications typically apply a very high acceleration voltage (≥50 kV). However, in many research environments, more cost-effective instruments are used. These tools are usually optimized for high-resolution writing and are not very fast. Hence, they are normally not considered very suitable for writing large-scale structures with high pattern densities, even for limited resolution applications. In this paper, the authors show that a carefully considered optimization of the writing parameters in an EBL instrument (Raith e_LiNE) can improve the writing time to more than 40 times faster than commonly used instrument settings. The authors have applied the optimization procedure in the fabrication of high-precision photolithography masks. Chrome photolithography masks, 15 mm in diameter with a write resolution of 200 nm, were routinely produced during overnight exposures (less than 9 h). The write time estimated by the instrument software for most commonly used settings was close to 14 days. A comparison with conventional chrome masks fabricated using a high-resolution (128 000 dpi) photolithography mask printer showed that our pattern definition is significantly better.
机译：电子束光刻（EBL）是无掩模光刻技术，广泛用于制造超高分辨率光刻掩模的应用。 EBL的主要缺点是它很耗时，需要以连续的方式写入模式。使用各种方法来减少写入时间。工业应用中使用的以吞吐量为导向的EBL仪器通常会施加很高的加速电压（≥50kV）。但是，在许多研究环境中，使用了更具成本效益的仪器。这些工具通常针对高分辨率写入进行了优化，并且速度不是很快。因此，即使对于分辨率有限的应用，它们通常也不适合用于编写具有高图案密度的大规模结构。在本文中，作者表明，仔细考虑的EBL仪器（Raith e_LiNE）写入参数的优化可以将写入时间提高到比常用仪器设置快40倍以上。作者已将优化程序应用于高精度光刻掩模的制造中。通常在过夜曝光（少于9小时）期间生产直径15毫米，写入分辨率为200 nm的镀铬光刻掩模。仪器软件估计的最常用设置的写入时间接近14天。与使用高分辨率（128 000 dpi）光刻掩模打印机制造的常规铬掩模的比较表明，我们的图案清晰度明显更好。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2013年第4期|1-8|共8页
  • 作者

    Greve Martin M.; Holst Bodil;

  • 作者单位

    Department of Physics and Technology, University of Bergen, Allègaten 55, 5007 Bergen, Norway and EnSol AS, Apeltunveien 2, Nesttun, 5222 Bergen, Norway|c|;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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