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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO_3-based metal-insulator-metal capacitors grown by atomic layer deposition

机译:前驱体化学性质和生长温度对原子层沉积生长的SrTiO_3基金属-绝缘体-金属电容器的电性能的影响

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摘要

SrTiO_3 thin films were grown to thicknesses in the range of 18-30 nm by atomic layer deposition using Sr(~iPr_3Cp)_2 and (CpMe_5)Ti(OMe)_3 as strontium and titanium precursors at 250 and 300 ℃. Water or ozone was used as oxygen precursor. The films were amorphous in as-deposited state, but crystallized as cubic SrTiO_3 after annealing at 650 ℃. The highest permittivity values, 60-65, were achieved in the films deposited with ozone at 300 ℃. The films grown at 250 ℃ tended to possess markedly lower leakage currents than those grown at 300 ℃.
机译:通过Sr(〜iPr_3Cp)_2和(CpMe_5)Ti(OMe)_3作为锶和钛的前驱体,在250和300℃下通过原子层沉积法将SrTiO_3薄膜的厚度生长到18-30 nm。水或臭氧用作氧气前体。薄膜在沉积状态下为非晶态,但在650℃退火后结晶为立方SrTiO_3。在300℃的臭氧下沉积的薄膜的介电常数最高,为60-65。与在300℃下生长的薄膜相比,在250℃下生长的膜倾向于具有明显更低的漏电流。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第1期|p.01AC04.1-01AC04.5|共5页
  • 作者单位

    Departamento de Electricidad y Electrdnica, E.T.S.I. Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electrdnica, E.T.S.I. Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electrdnica, E.T.S.I. Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electrdnica, E.T.S.I. Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electrdnica, E.T.S.I. Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

    Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland;

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