Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

Lina Wei-Wei Fang; Rong Zhao; Kian-Guan Lim; Hongxin Yang; Luping Shi; Tow-Chong Chong; Yee-Chia Yeo

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Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

机译：具有硅化物金属触点和高κ中间层的相变随机存取存储器，可降低工作功耗

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A phase change memory device integrated with a nickel monosilicide (NiSi) bottom electrode and a dielectric (Ta_2O_5) interlayer was investigated. The presence of a low thermal conductivity thin film between the bottom electrode and phase change layer promotes heating efficiency in the device. Reset voltages down to 2.2 and 1.86 V could be achieved for memory device without and with the Ta_2O_5 interlayer, respectively. In addition, low reset current of 0.66 mA and SET current of 0.2 mA were obtained for devices with Ta_2O_5 interlayer having a contact dimension of ~ 1 /mm. Endurance of the devices was also studied. © 2077 American Vacuum Society.

机译：研究了集成有单硅化镍（NiSi）底部电极和电介质（Ta_2O_5）中间层的相变存储器件。在底部电极和相变层之间存在低热导率薄膜会提高器件的加热效率。对于不带Ta_2O_5夹层的存储设备，可以分别实现低至2.2和1.86 V的复位电压。此外，对于Ta_2O_5中间层且接触尺寸约为1 / mm的器件，可获得0.66 mA的低复位电流和0.2 mA的SET电流。还研究了设备的耐久性。 ©2077美国真空协会。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.032207.1-032207.5|共5页
作者
Lina Wei-Wei Fang; Rong Zhao; Kian-Guan Lim; Hongxin Yang; Luping Shi; Tow-Chong Chong; Yee-Chia Yeo;
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作者单位

Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260,Singapore;

Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore;

Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore;

Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore;

Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore;

Singapore University of Technology and Design, 287 Ghim Moh Road, #04-00, Singapore 279623,Singapore;

Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260,Singapore;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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机译：相变随机存取存储器的优化采用相变材料

Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

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