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首页> 外文期刊>Journal of Vacuum Science & Technology >Effect of interfacial formation on the properties of very long Wavelength infrared InAs/GaSb superlattices
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Effect of interfacial formation on the properties of very long Wavelength infrared InAs/GaSb superlattices

机译：界面形成对超长波长红外InAs / GaSb超晶格性能的影响

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摘要

In InAs/GaSb superlattices (SLs) designed for infrared detection, the interfacial layers comprise approximately 10%—15% of the heterostructure. As interdiffusion into the InAs and GaSb layers is considered, this percentage is expected to be even higher. Although the primary goal for engineering these transient layers is to balance the SL strain to the GaSb substrate, the interfacial quality can impact the performance of the SL in other ways as well. Many believe that the majority of nonradiative defects that shorten carrier lifetime can be generated from the SL interfaces or regions near them due to the poor interface engineering. Because the degree of lattice mismatch tends to be higher in very long wavelength infrared InAs/GaSb designs, the approach tuning growth parameters to optimize the strain balancing process is different from that for midinfrared SLs. To investigate this optimization, a systematic approach was applied to achieve strain compensated 16 monolayers (MLs) InAs/7 MLs GaSb SLs aimed for a target onset wavelength of 15 fim. The authors systematically explored the effect of growth parameters, such as group V fluxes, growth rates, and shutter sequences, on the SL strain and interfacial quality. For this study, high-resolution x-ray diffraction and atomic force microscopy analysis were extensively used to monitor the effect of interfaces on material properties.
机译：在为红外检测而设计的InAs / GaSb超晶格（SL）中，界面层约占异质结构的10％至15％。考虑到向InAs和GaSb层的互扩散，预计该百分比会更高。尽管设计这些瞬态层的主要目的是使SL应变与GaSb衬底平衡，但界面质量也会以其他方式影响SL的性能。许多人认为，由于不良的接口工程，可能会从SL接口或它们附近的区域产生大多数缩短载流子寿命的非辐射缺陷。由于在非常长的波长InAs / GaSb红外设计中晶格失配的程度趋于更高，因此调整生长参数以优化应变平衡过程的方法与中红外SL的方法不同。为了研究此优化，采用了一种系统化的方法来实现应变补偿的16个单层（ML）InAs / 7 ML GaSb SL，其目标起始波长为15 fim。作者系统地研究了生长参数（例如V组通量，生长速率和快门序列）对SL菌株和界面质量的影响。对于本研究，高分辨率X射线衍射和原子力显微镜分析被广泛用于监测界面对材料性能的影响。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C101.1-03C101.5|共5页
  • 作者

    H. J. Haugan; G. J. Brown; L. Grazulis;

  • 作者单位

    Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433;

    Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433;

    Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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