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首页> 外文期刊>Journal of Vacuum Science & Technology >Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation
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Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation

机译:GaAs(001)上外延NiTi形状记忆合金膜的生长及马氏体转变的证据

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摘要

The molecular beam epitaxy growth of epitaxial NiTi shape memory alloy films on GaAs(OOl) semiconductor substrates is demonstrated. An ErAs interlayer was used as a template to promote the epitaxial growth and as a diffusion barrier to effectively suppress intermixing between NiTi film and GaAs substrate. Though the films are constrained by the substrate, temperature dependent x-ray diffraction and resistivity measurements reveal reversible martensitic transformations upon heating and cooling near room temperature. © 2077 American Vacuum Society.
机译:证明了GaAs(OOl)半导体衬底上外延NiTi形状记忆合金膜的分子束外延生长。 ErAs夹层用作模板以促进外延生长,并用作扩散阻挡层以有效抑制NiTi膜与GaAs衬底之间的混合。尽管薄膜受基材限制,但温度相关的X射线衍射和电阻率测量显示,在室温附近加热和冷却时,马氏体相变是可逆的。 ©2077美国真空协会。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C116.1-03C116.5|共5页
  • 作者单位

    Electrical and Computer Engineering Department, University of California, Santa Barbara,California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, California and Materials Department, University of California, Santa Barbara, California 93106;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, California and Materials Department, University of California, Santa Barbara, California 93106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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