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Electrical properties of Er-doped lrio.53Gao.47As

机译:掺Er的lrio.53Gao.47As的电性能

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摘要

The electrical properties of In_(0.53)Ga_(0.47)As thin films Er-doped to concentrations of 1.5×10~(17)—7.2 X 10~(20) cm~(-3) grown by molecular beam epitaxy at 490 ℃ on (001) InP substrates were studied. Electrical conductivity, carrier density, and carrier mobility as a function of Er doping were measured by Hall effect at temperatures of 20-750 K. Additionally, high-angle annular dark-field scanning transmission electron microscopy and infrared absorption spectroscopy confirmed the presence of epitaxially embedded ErAs nanoparticles at Er concentrations ≥8× 10~(19) cm~(-3). The observed electrical properties are discussed in terms of the dependence of ErAs nanoparticle formation with Er doping.
机译:490℃分子束外延生长浓度为1.5×10〜(17)—7.2 X 10〜(20)cm〜(-3)的In_(0.53)Ga_(0.47)As薄膜的电学性质研究了(001)InP衬底。通过霍尔效应在20-750 K的温度下测量电导率,载流子密度和载流子迁移率与Er掺杂的关系。此外,高角度环形暗场扫描透射电子显微镜和红外吸收光谱证实了外延存在嵌入的ErAs纳米粒子的Er浓度≥8×10〜(19)cm〜(-3)。根据ErAs纳米颗粒形成与Er掺杂的相关性讨论了观察到的电学性质。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C117.1-03C117.5|共5页
  • 作者单位

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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