...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology >Enhanced normal incidence photocurrent in quantum dot infrared photodetectors
【24h】

Enhanced normal incidence photocurrent in quantum dot infrared photodetectors

机译：量子点红外光电探测器中增强的法向入射光电流

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The authors report an enhancement in the photocurrent caused by normal incidence (s-polarization) radiation in a quantum dot-in-a-well (DWELL) based infrared photodetector. The s-to-p polarization ratio was increased to 50%, compared to the 20% in conventional quantum dot (QD) detectors. This improvement was achieved through engineering the dot geometry and the quantum confinement via postgrowth capping materials of the QDs. The effect of the capping procedures was determined by examining the dot geometry using transmission electron microscopy (TEM) and s-to-p ratio of the polarized photocurrent in the DWELL infrared photodetector. The TEM image shows a quantum dot with a reduced base of 12 nm and an increased height of 8 nm. The infrared photodetector fabricated from this material shows peak photodetectivities of 1 X 10~9 cmHz~(l/2)/W at 77 K for a peak wavelength of 4.8 μm and 1 X 107 cm Hz~(1/2)/W at 300 K for a peak wavelength of 3.2 μm. The dark current density is as low as 2 X 10~(-4) A/cm~2 and the photoconductive gain is 100 at the optimal operating bias.
机译：作者报告说，基于量子阱中（DWELL）的红外光电探测器中的法向入射（s极化）辐射会导致光电流增强。与传统量子点（QD）检测器中的20％相比，s-p极化比增加到50％。通过设计量子点的后生长帽盖材料来设计点的几何形状和量子限制，可以实现这一改进。通过使用透射电子显微镜（TEM）检查点的几何形状以及DWELL红外光电探测器中极化光电流的s / p比来确定加盖程序的效果。 TEM图像显示量子点的碱基减少了12 nm，高度增加了8 nm。用这种材料制成的红外光电探测器在峰值波长为4.8μm时在77 K时显示出1 X 10〜9 cmHz〜（l / 2）/ W的峰值光电探测率，在峰值波长为1 X 107 cm Hz〜（1/2）/ W时的峰值探测率。 300 K，峰值波长为3.2μm。在最佳工作偏压下，暗电流密度低至2 X 10〜（-4）A / cm〜2，光电导增益为100。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C123.1-03C123.6|共6页
  • 作者

    Jiayi Shao; Thomas E. Vandervelde; Ajit Barve; Woo-Yong Jang; Andreas Stintz; Sanjay Krishna;

  • 作者单位

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;

    Department of Electrical and Computer Engineering, Tufts University, 161 College Ave., Medford,Massachusetts 02155;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号