Formation of single-orientation epitaxial islands of TiSi2 on $i(001) using Sr passivation

A. Posadas; R. Dargis; M. R. Choi; A. Slepko; A. A. Demkov; J. J. Kim; D. J. Smith

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Formation of single-orientation epitaxial islands of TiSi2 on $i(001) using Sr passivation

机译：使用Sr钝化在$ i（001）上形成TiSi2单取向外延岛

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Epitaxial islands of C49-phase TiSi_2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO_3, which prevents the reaction between Ti and Si. Decomposition of SrTiO_3 at temperatures above 800 °C drives off Sr and O completely, leaving epitaxial islands of TiSi_2 dispersed on the Si surface. The TiSi_2 islands have (010) orientation and an in-plane epitaxial relationship of Si[l 10]IITiSi_2[100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.

机译：已经在Si（001）衬底上制造了尺寸最大为100 nm且具有单晶取向的C49相TiSi_2的外延岛。生长过程包括使用Sr对Si表面进行钝化，然后沉积SrTiO_3形式的Ti，从而阻止了Ti与Si之间的反应。在高于800°C的温度下SrTiO_3的分解会完全驱除Sr和O，从而使TiSi_2的外延岛分散在Si表面上。 TiSi_2岛具有（010）取向和Si [110] IITiSi_2 [100]的面内外延关系。表面和界面能的密度泛函计算表明，岛的大小和接触角与表面能的最小化相一致。

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《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C131.1-03C131.6|共6页
作者
A. Posadas; R. Dargis; M. R. Choi; A. Slepko; A. A. Demkov; J. J. Kim; D. J. Smith;
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作者单位

Department of Physics, The University of Texas at Austin, Austin, Texas 78712;

Department of Physics, The University of Texas at Austin, Austin, Texas 78712;

Department of Physics, The University of Texas at Austin, Austin, Texas 78712;

Department of Physics, The University of Texas at Austin, Austin, Texas 78712;

Department of Physics, The University of Texas at Austin, Austin, Texas 78712;

Department of Physics, Arizona State University, Tempe, Arizona 85287;

Department of Physics, Arizona State University, Tempe, Arizona 85287;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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4. Formation ofSingle-Orientation Epitaxial Islands ofTiSi2 on Si (001) Using Sr Passivation [C] . J.J. Kim, A. Posadas, R. Dargis, International Metallographic Society Annual meeting;Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting . 2011

机译：利用Sr钝化在Si（001）上形成TiSi2单取向外延岛
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Formation of single-orientation epitaxial islands of TiSi2 on $i(001) using Sr passivation

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