High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Marta Sawicka; Anna Feduniewicz-Zmuda; Henryk Turski; Marcin Siekacz; Szymon Grzanka; Marcin Krysko; Igor Dziecielewski; Izabella Grzegory; Czestaw Skierbiszewski

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High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

机译：等离子体辅助分子束外延在富氮条件下生长的高质量m面GaN

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Homoepitaxial growth of m-plane GaN (1100) as a function of substrate miscut and temperature was studied by plasma assisted molecular beam epitaxy (PAMBE). The authors demonstrate that it is possible to obtain high-quality GaN on the m-plane under nitrogen-rich conditions at 730 °C. This is in contrast to the c-plane where three-dimensional growth mode is observed under the same conditions. They find a strong growth anisotropy and describe GaN (lfOO) surface morphology dependence on the sample miscut direction. The results indicate that by introducing a sample miscut toward (1126) one may expect parallel atomic steps when growing under nitrogen-rich conditions at 730 ℃ by PAMBE.

机译：通过等离子辅助分子束外延（PAMBE）研究了m面GaN（1100）的同质外延生长与衬底错切和温度的关系。作者证明，可以在730°C的富氮条件下在m面上获得高质量的GaN。这与在相同条件下观察到三维生长模式的c平面相反。他们发现了很强的生长各向异性，并描述了GaN（lfOO）表面形态对样品误切方向的依赖性。结果表明，通过引入偏向（1126）的样品，当PAMBE在730℃的富氮条件下生长时，可能会期望平行的原子步长。

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《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C135.1-03C135.5|共5页
作者
Marta Sawicka; Anna Feduniewicz-Zmuda; Henryk Turski; Marcin Siekacz; Szymon Grzanka; Marcin Krysko; Igor Dziecielewski; Izabella Grzegory; Czestaw Skierbiszewski;
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作者单位

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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专利

1. Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy [J] . Marta Sawicka, Henryk Turski, Marcin Siekacz, Physical review . 2011,第24期

机译：等离子体辅助分子束外延在富氮条件下生长的m面GaN（1100）的阶跃流各向异性
2. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions [J] . Meng Zhang Pallab Bhattacharya Wei Guo and Animesh Banerjee Applied Physics Letteres . 2010,第13期

机译：富氮条件下等离子体辅助分子束外延生长的GaN的Mg掺杂
3. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions [J] . Meng Zhang, Pallab Bhattacharya, Wei Guo, Applied Physicsletters . 2010,第13期

机译：富氮条件下等离子体辅助分子束外延生长的GaN的Mg掺杂
4. Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template [C] . Toshihide Ide, Mitsuaki Shimizu, Jason Kuo, International conference on nitride semiconductors . 2003

机译：由等离子辅助分子束外延生长的GaN层的表面形态，MOCVD-生长的GaN模板
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy [O] . Shuo-Ting You, Ikai Lo, Jenn-Kai Tsai, 2015

机译：等离子体辅助分子束外延生长ZnO微棒上m面GaN的外延生长
8. Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy [R] . Sanford, N. A., Blanchard, P. T., Bertness, K. A., 2010

机译：氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

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