Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

著录项

• 来源
  《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C136.1-03C136.5|共5页
• 作者

  H. Turski; M. Siekacz; M. Sawicka; G. Cywinski; M. Krysko; S. Grzanka; J. Smalc-Koziorowska; I. Grzegory and S. Porowski; Z. R. Wasilewski; C. Skierbiszewski;

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• 作者单位

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland and TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland and TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland and TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland;

  Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada;

  Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland and TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland;

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• 正文语种 eng
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