Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering

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• 来源
  《Journal of Vacuum Science & Technology》 |2011年第3期|p.031201.1-031201.5|共5页
• 作者

  Myung Soo Huh; Seok-Jun Won; Bong Seob Yang; Seungha Oh; Myeong Sook Oh; Jae Kyeong Jeong; Hyeong Joon Kim;

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• 作者单位

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea and R&D Center, Samsung Mobile Display, Co.,Ltd., Gyeonggi-do, 449-902, Korea;

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea;

  Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea;

  Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,Seoul National University, Seoul 151-744, Korea;

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• 正文语种 eng
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