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首页> 外文期刊>Journal of Vacuum Science & Technology >CI_2/BCI_3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AIGaN/GaN high-electron mobility transistors
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CI_2/BCI_3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AIGaN/GaN high-electron mobility transistors

机译：CI_2 / BCI_3 / Ar等离子体蚀刻和原位氧等离子体处理可抑制AIGaN / GaN高电子迁移率晶体管中的泄漏电流

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摘要

An effective mesa-isolation process using Cl-based gas chemistry and oxygen plasma post-treatment is investigated to minimize the effect of plasma-induced damage on AIGaN/GaN high-electron mobility transistor (HEMT) performance. Plasma-induced dc bias of the dry etching of AIGaN/GaN heterostructures is optimized using Cl_2/BCl_3/Ar gases by monitoring leakage current between adjacent mesas and etch profiles near mesa edges. A dc bias of ~ 100 V leads to a smoother etched surface and mesa surface near mesa edge and a lower leakage current than dc bias of 260 V. AIGaN/GaN HEMTs fabricated under a dc bias of 100 V show a reasonable pinch-off performance but still high drain leakage current level (tens of microamperes). Oxygen plasma treatment after dry etching is introduced for further reduction in the leakage current. In situ oxygen plasma treatment more effectively improves the leakage current/breakdown performance than ex situ oxygen plasma treatment after the HEMTs are exposed to air. Combination of low-bias Cl-based dry etching and in situ plasma treatment leads to a breakdown voltage higher than 90 V and a drain leakage current of a few nanoamperes at (V_(DS),V_(GS)) = (5 V,
机译：研究了一种基于Cl的气体化学和氧等离子体后处理的有效台面隔离工艺，以最大程度地减少等离子体诱导的损伤对AIGaN / GaN高电子迁移率晶体管（HEMT）性能的影响。通过监测相邻台面之间的漏电流和台面边缘附近的蚀刻轮廓，使用Cl_2 / BCl_3 / Ar气体优化了AIGaN / GaN异质结构干法刻蚀的等离子体感应直流偏置。直流偏置电压〜100 V导致台面边缘附近的蚀刻表面和台面表面更光滑，泄漏电流低于260 V直流偏置电压。在100 V直流偏置电压下制造的AIGaN / GaN HEMT显示出合理的夹断性能但漏极漏电流仍然很高（数十微安）。为了进一步降低漏电流，引入了干法刻蚀后的氧等离子体处理。 HEMT暴露于空气后，原位氧等离子体处理比异位氧等离子体处理更有效地改善了漏电流/击穿性能。低偏压基于Cl的干法刻蚀和原位等离子体处理相结合会导致击穿电压高于90 V，并且在（V_（DS），V_（GS））=（5 V，

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.031204.1-031204.5|共5页
  • 作者

    Hyeongnam Kim; Michael L. Schuette; Wu Lu;

  • 作者单位

    Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210;

    Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210;

    Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 and Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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