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Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

机译：各种铜阻挡膜的电气和可靠性特性的综合比较

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摘要

The physical, electrical, and reliability characteristics of various Copper (Cu) barrier films, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The experimental results indicate that the SiN film is the best barrier film against Cu diffusion, adheres strongly to Cu film, and exhibits reliable electromigration (EM) performance, but its dielectric constant is too high. Nitrogen-doped or oxygen-doped silicon carbide films (SiCN or SiCO) have a lower dielectric constant, but at the cost of reduced reliability. SiCNO film that is doped with both nitrogen and oxygen exhibits more reliable EM and stress-migration with a comparable physical and electrical performance to that of the SiN film.
机译：研究了包括SiC，SiCN，SiCO，SiCNO和SiN在内的各种铜（Cu）阻挡膜的物理，电学和可靠性特征。实验结果表明，SiN膜是抵抗Cu扩散的最佳阻挡膜，可以牢固地粘附在Cu膜上，并具有可靠的电迁移（EM）性能，但介电常数太高。氮掺杂或氧掺杂的碳化硅膜（SiCN或SiCO）具有较低的介电常数，但会降低可靠性。掺有氮和氧的SiCNO膜表现出更可靠的EM和应力迁移，其物理和电性能与SiN膜相当。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.031207.1-031207.7|共7页
  • 作者

    Yi-Lung Cheng; Jiung Wu; Tai-Jung Chiu; Shiuan-An Chen; Ying-Lang Wang;

  • 作者单位

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, 54561 Taiwan,Republic of China;

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, 54561 Taiwan,Republic of China;

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, 54561 Taiwan,Republic of China;

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, 54561 Taiwan,Republic of China;

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, 54561 Taiwan,Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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