...
首页> 外文期刊>Journal of Vacuum Science & Technology >Growth and transport studies of BaMn2As2 thin films
【24h】

Growth and transport studies of BaMn2As2 thin films

机译:BaMn2As2薄膜的生长和迁移研究

获取原文
获取原文并翻译 | 示例
           

摘要

Epitaxial BaMn_2As_2 thin films were grown on GaAs(OOl) using molecular beam epitaxy. The samples exhibited temperature-dependent resistivity, a behavior typical of semiconductors. Activation energies for samples grown at 350, 450, and 550 °C were 24.1, 24.3, and 51.9 meV, respectively. Holes are the dominant carrier for the samples grown at 450 and 550 °C, while electrons are the dominant carrier for the sample grown at 350 °C. Negative magnetoresistance was obtained at low temperature and became positive at high temperature, which was attributed to MnAs nanoclusters.
机译:使用分子束外延在GaAs(001)上生长外延BaMn_2As_2薄膜。样品表现出随温度变化的电阻率,这是半导体的典型行为。在350、450和550°C下生长的样品的活化能分别为24.1、24.3和51.9meV。空穴是在450和550°C下生长的样品的主要载体,而电子是在350°C下生长的样品的主要载体。在低温下获得负磁阻,在高温下变为正磁阻,这归因于MnAs纳米团簇。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.031210.1-031210.5|共5页
  • 作者单位

    Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea;

    Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea;

    Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号