Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight-secondary ion mass spectrometry

Matthieu Py; Jean-Paul Barnes; Rachid Boujamaa; Michael Gros-Jean; Kaoru Nakajima; Kenji Kimura; Charbel Roukoss; Bernard Pelissier; Narciso Gambacorti

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Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight-secondary ion mass spectrometry

机译：超薄高k堆栈的全光谱飞行时间二次离子质谱定量深度分析

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Elemental concentration depth profiles of high-k material stacks for 32 nm node devices and below were acquired by high resolution backscattering spectrometry (HRBS), parallel angle resolved-x-ray photoelectron spectroscopy (pAR-XPS), and time of flight-secondary ion mass spectrometry (ToF-SIMS). ToF-SIMS data were analyzed using an original calibration method which the authors shall refer to as the full spectrum protocol. Three different samples were studied in this work, one ultrathin insulating layer (IL) alone and two nitridized high-k/IL samples with different nitridation conditions for the IL. Although HRBS and AR-XPS already proved their ability in this domain, SIMS or ToF-SIMS characterization of high-k material stacks is still hampered by various matrix effects. Comparison of the elemental profiles obtained by all three techniques allows the accuracy of the full spectrum ToF-SIMS protocol to be assessed, both in terms of chemical composition quantification and depth resolution. This study reveals the feasibility of quantitative and depth resolved ToF-SIMS profiling of ultrathin high-k material stacks. © 2077 American Vacuum Society.

机译：通过高分辨率背散射光谱法（HRBS），平行角分辨X射线光电子能谱法（pAR-XPS）和飞行辅助离子的时间获取了用于32 nm及以下节点设备的高k材料堆栈的元素浓度深度分布图质谱（ToF-SIMS）。使用原始校准方法分析了ToF-SIMS数据，作者将其称为全光谱协议。在这项工作中研究了三个不同的样品，一个是超薄绝缘层（IL），另一个是两个具有不同氮化条件的氮化高k / IL样品。尽管HRBS和AR-XPS已经证明了其在这一领域的能力，但各种基质效应仍然阻碍了高k材料堆叠的SIMS或ToF-SIMS表征。通过所有三种技术获得的元素分布图的比较，可以从化学成分定量和深度分辨率两方面评估全谱ToF-SIMS协议的准确性。这项研究揭示了对超薄高k材料堆栈进行定量和深度解析的ToF-SIMS分析的可行性。 ©2077美国真空协会。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.032208.1-032208.9|共9页
作者
Matthieu Py; Jean-Paul Barnes; Rachid Boujamaa; Michael Gros-Jean; Kaoru Nakajima; Kenji Kimura; Charbel Roukoss; Bernard Pelissier; Narciso Gambacorti;
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作者单位

CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France and STMicroelectronics,850 rue de Jean Monnet, 38926 Crolles, France;

STMicroelectronics, 850 rue de Jean Monnet, 38926 Crolles, France;

Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

LTM-CNRS/CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

LTM-CNRS/CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight-secondary ion mass spectrometry

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