• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology >Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates
【24h】

Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates

机译：通过在SOI（100）衬底上化学气相沉积异质外延SiC膜形成的半导体纳米孔

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ～10 nm were grown by pulse jet CVD of CH_3SiH_3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (～nm) pore formation.
机译：作者研究了在异质外延SiC膜上通过化学气相沉积（CVD）在Si（100）膜上进行化学气相沉积（CVD）形成纳米级孔（纳米孔）阵列的过程，该膜是通过从背面从绝缘体衬底上各向异性蚀刻硅而制备的。通过CH_3SiH_3气体的脉冲喷射CVD法生长了厚度约为10nm的SiC异质外延膜。在SiC的生长过程中，由于Si原子从块体Si向外扩散，带有{111}晶面的倒金字塔状凹坑长入了Si膜。纳米孔形成在倒金字塔孔的尖端。发现孔径取决于Si膜下掩埋氧化物层的存在。建议在Si膜上SiC生长期间保持{111}面对于较小尺寸（〜nm）的孔形成至关重要。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第6期|p.062001.1-062001.5|共5页
  • 作者

    Yoshifumi Ikoma; Hafizal Yahaya; Keiji Kuriyama; Hirofumi Sakita; Yuta Nishino; Teruaki Motooka;

  • 作者单位

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan and Department of Science, Universiti Teknologi Malaysia, International Campus, 54100 Jalan Semarak, Kuala Lumpur, Malaysia;

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan and Kyushu University Cleanroom Laboratory Facility, 8-7 Yayoigaoka, Tosu, Saga 841-0005, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号