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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas
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Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

机译：在双频CH2F2 / H2 / Ar电容耦合等离子体中蚀刻具有极端紫外线抗蚀剂图案的氮氧化硅期间的无限蚀刻选择性和线边缘粗糙度变化

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摘要

The process window for infinitely high etch selectivity of silicon oxynitride (SiON) layers to extreme ultraviolet (EUV) resist and the variation in line edge roughness (LER) of etched EUV resist were investigated in a CH2F2/H2/Ar dual-frequency superimposed capacitively coupled plasma under various process parameters including the gas flow ratio and low-frequency source power (PLF). The CH2F2/H2 gas flow ratio was found to play a critical role in determining the process window for infinite selectivity of the SiON/EUV resist due to the change in the degree of polymerization. The preferential chemical reaction of hydrogen and carbon species in the hydrofluorocarbon (CHxFy) layer with nitrogen on the SiON surface led to the formation of HCN etch by-products, resulting in a thinner steady-state CHxFy layer. During continuous SiON etching, the thinner steady-state CHxFy layer was due to enhanced SiF4 formation, while the CHxFy layer was deposited on the EUV resist surface. In addition, the critical dimension and LER tended to increase with increasing Q(CH2F2) flow ratio.
机译：在CH2F2 / H2 / Ar双频电容叠加下，研究了氮氧化硅（SiON）层对极紫外（EUV）抗蚀剂的无限高蚀刻选择性的工艺窗口以及蚀刻的EUV抗蚀剂的线边缘粗糙度（LER）的变化在各种工艺参数（包括气体流量比和低频源功率（PLF））下耦合等离子体。发现CH 2 F 2 / H 2气体流量比在确定工艺窗口中由于聚合度的变化而对SiON / EUV抗蚀剂的无限选择性起着关键作用。氢氟碳化合物（CHxFy）层中的氢和碳物种与SiON表面上的氮的优先化学反应导致形成HCN蚀刻副产物，从而导致更薄的稳态CHxFy层。在连续的SiON蚀刻期间，更薄的稳态CHxFy层归因于增强的SiF4形成，而CHxFy层则沉积在EUV抗蚀剂表面上。另外，临界尺寸和LER倾向于随着Q（CH 2 F 2）流量比的增加而增加。

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