Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

A. Merkulov; P. Peres; S. Choi; F. Horreard; H.-U. Ehrke; N. Loibl; M. Schuhmacher

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Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

机译：B，P和As超浅注入的前几纳米中的高级二次离子质谱定量

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This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs~+ and O_2~+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth <5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and SiO_2.

机译：本文介绍了有关超浅轮廓的二次离子质谱（SIMS）轮廓定量的研究。 CAMECA IMS Wf工具上的铯和氧源的新配置提供了150 eV冲击能量下的SIMS剖析能力，分别对Cs〜+和O_2〜+主光束的溅射速率为1和2 nm / min。报告了使用极低冲击能量（EXLIE）溅射条件注入的B，P和As轮廓的结果。将它们与高分辨率卢瑟福背向散射光谱法和弹性反冲检测分析曲线进行了比较。总体结果证实，使用EXLIE条件可最大程度地减少近表面（深度<5 nm）的伪影，但数据量化仍需要进行专门的分析后数据处理，以考虑到Si和SiO_2之间的基质效应。

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来源
《Journal of Vacuum Science & Technology》 |2010年第1期|p.C1C48-C1C53|共6页
作者
A. Merkulov; P. Peres; S. Choi; F. Horreard; H.-U. Ehrke; N. Loibl; M. Schuhmacher;
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作者单位

CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France;

CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France;

CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France;

CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France;

CAMECA GmbH, Edisonstr. 3, 85716 Unterschleissheim/Munich, Germany;

CAMECA GmbH, Edisonstr. 3, 85716 Unterschleissheim/Munich, Germany;

CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Advanced SIMS quantification in the first few nm of B, P and As ultrashallow implants [J] . Merkulov A., Peres P., Choi S., Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2011,第1a2期

机译：在B，P和As超浅植入物的前几nm中进行高级SIMS定量
2. Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry [J] . C. Hongo, M. Tomita, M. Takenaka, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第4期

机译：使用背面二次离子质谱仪对超浅植入物进行深度分析
3. Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile - art. no. 113412 [J] . Dowsett MG., Al-Harthi SH., Ormsby TJ., Physical Review, B. Condensed Matter . 2002,第11期

机译：在超浅植入物轮廓的前几个纳米中建立精确的深度标度校准-art。没有。 113412
4. Study of Ion-implanted InSb1-xNx Alloys using Secondary Ion Mass Spectroscopy [C] . Wang Y., Zhang D. H., Huang Z. M., IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：使用二次离子质谱研究离子植入的INSB 1-X / INM> N X / IM>合金
5. A study of polymer tertiary structure in Langmuir monolayer films of poly(dimethyl siloxane) by time-of-flight secondary ion mass spectrometry, reflection-absorption Fourier transform infrared spectroscopy and high-resolution electron energy loss spectroscopy. [D] . Piwowar, Alan M. 2007

机译：通过飞行时间二次离子质谱，反射吸收傅里叶变换红外光谱和高分辨率电子能量损失光谱研究聚（二甲基硅氧烷）Langmuir单层膜中的聚合物三级结构。
6. Correction for Finzi-Hart et al. Fixation and fate of C and N in the cyanobacterium Trichodesmium using nanometer-scale secondary ion mass spectrometry [O] . 2009

机译：Finzi-Hart等人的校正使用纳米级二次离子质谱法对毛状线虫蓝细菌中碳和氮的固定和结局
7. 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study [O] . Current M. I., Lopes D., Foad M.A., 1998

机译：200 eV–10 keV硼注入和快速热退火：二次离子质谱和透射电子显微镜研究
8. Electrical, Luminescence and SIMS (Secondary Ion Mass Spectroscopy) Characterization of Carbon Implanted Vapor Phase Epitaxial Gallium Arsenide [R] . Sydenstricker, R. M. 1983

机译：碳注入气相外延砷化镓的电学，发光和sIms（二次离子质谱）表征

Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

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