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首页> 外文期刊>Journal of Vacuum Science & Technology >Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer
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Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer

机译：通过注入氧层转移分离制造的绝缘体上硅的特性和分析

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摘要

In this article, silicon on insulator (SOI) was fabricated by separation by implanted oxygen (SIMOX) layer transfer process. The thickness uniformity of the top Si (superficial Si of the SOI) evaluated by spectroscopic ellipsometry remains constant through the etch-stop thinning process. A defect-free top Si was observed by transmission electron microscopy, as well as its atomic-scale sharp interface that was adjacent to the buried oxide (BOX) layer. The top Si/BOX interface properties, including upper BOX surface roughness and interface state density, were investigated by atomic force microscopy (AFM) and pseudo-metal-oxide-semiconductor method, respectively. In addition, the surface morphology of the square pit and square hole defect of the top Si were observed. Using AFM, it is found that the morphology depends on the top Si/BOX interface morphology of the donor wafer and can be improved by optimizing the annealing process. The square hole defect caused by anisotropic etching is discussed in detail, and it is proven to originate from the defects in the SIMOX BOX.
机译：在本文中，通过注入氧（SIMOX）层转移工艺进行分离来制造绝缘体上硅（SOI）。在蚀刻停止薄化工艺中，通过光谱椭圆偏光法评估的顶部Si（SOI的表面Si）的厚度均匀性保持恒定。通过透射电子显微镜观察到无缺陷的顶部Si，以及与掩埋氧化物（BOX）层相邻的原子级尖锐界面。分别通过原子力显微镜（AFM）和伪金属氧化物半导体方法研究了最高的Si / BOX界面特性，包括较高的BOX表面粗糙度和界面态密度。另外，观察到顶部Si的方坑和方孔缺陷的表面形态。使用AFM，发现形态取决于施主晶片的顶部Si / BOX界面形态，并且可以通过优化退火工艺来改善。详细讨论了由各向异性蚀刻引起的方孔缺陷，事实证明它源自SIMOX BOX中的缺陷。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第1期|p.163-168|共6页
  • 作者

    Xing Wei; Aimin Wu; Xiang Wang; Xianyuan Li; Fei Ye; Jie Chen; Meng Chen; Bo Zhang; Chenglu Li; Miao Zhang; Xi Wang;

  • 作者单位

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China and Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China and Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China and Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading District, Shanghai 201821, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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