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首页> 外文期刊>Journal of Vacuum Science & Technology >Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array
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Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array

机译：使用表面碳化硅场发射体阵列的低能离子束无金属无气空间电荷补偿

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摘要

Surface-carbonized silicon field emitter array (Si:C-FEA), basically metal-free and gasless, was applied to a space charge compensation for neon ion beam after 700 mm, running with 0.5 keV and 15 μA. Estimated low energy electrons of 2.7 eV at maximum with current of 7.7 μA extracted from Si:C-FEA electron sources, which consisted of 7164-tip emitter cones and electron deceleration systems, were supplied into the ion beam. Transportation property was evaluated from the distribution of the current density of the ion beam with respect to its emittance. The distribution of the ion current density was narrowed and intensified by the electron supply. The transportation efficiency was improved from 56% to 87% by supplying electrons with the Si:C-FEA electron sources. This result showed the nearly complete space charge compensation similar to the reference result of the filament with transportation efficiency of 91%.
机译：表面碳化的硅场致发射器阵列（Si：C-FEA）基本无金属且无气体，被施加到700 mm后以0.5 keV和15μA运行的氖离子束的空间电荷补偿。从Si：C-FEA电子源提取的估计低能电子最大为2.7 eV，电流为7.7μA，该电子源由7164个尖端发射锥和电子减速系统组成，被提供给离子束。从离子束的电流密度相对于其发射率的分布来评估传输性质。离子电流密度的分布由于电子供应而变窄和增强。通过为Si：C-FEA电子源提供电子，传输效率从56％提高到87％。该结果表明接近完全的空间电荷补偿，类似于灯丝的参考结果，传输效率为91％。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第2期|C2D5-C2D10|共6页
  • 作者

    Mitsuaki Takeuchi; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai;

  • 作者单位

    Innovation Plaza Kyoto, Japan Science and Technology Agency, 1-30 Goryo-Ohara Nishikyo-ku,Kyoto 615-8245, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku,Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku,Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku,Kyoto 615-8510, Japan;

    Nissin Ion Equipment, Co. Ltd., 575 Kuze-Tonoshirocho, Minami-ku, Kyoto 601-8205, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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