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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Peculiarities of the photon-assisted field emissions from GaN nanorods
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Peculiarities of the photon-assisted field emissions from GaN nanorods

机译：GaN纳米棒的光子辅助场发射的特殊性

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摘要

The peculiarities of electron field and photon-assisted field emission from GaN nanorods are presented here. Well-aligned GaN field-emitter rods with nanometer-scale diameter were processed on a wafer with n+-GaN top active layer on n+-Si substrate by plasma and photoelectrochemical etching. The current-voltage characteristics of emission current in Fowler–Nordheim (FN) plots show different slopes for the initial device and with different wavelengths illuminated devices. At electron-field emission from GaN, as a rule, the curves with two slopes (lower at a low voltage and higher at a high voltage) in Fowler–Nordheim coordinates were observed. The influence of light illumination on the field emission was discovered only on the low-voltage part of the curve. At higher voltages, the experimental curves without and with illumination practically coincided. The slope of the low-voltage part of FN plots decreased as a result of illumination. This fact points at the lowering of the energy barrier at field emission due to the electron excitation caused by light. The energy-barrier heights at field and photofield emission were estimated. For the explanation of experimental results, a model based on electron excitation by light, subbandgap and band-to-band transitions, and electron emission from different valleys with their specific electron affinities has been proposed.
机译：这里介绍了GaN纳米棒的电子场和光子辅助场发射的特殊性。通过等离子和光电化学蚀刻，在n + -Si衬底上具有n + -GaN顶部有源层的晶片上，处理了纳米级直径的对准良好的GaN场致发射棒。 Fowler-Nordheim（FN）图中的发射电流的电流-电压特性显示了初始设备的斜率不同，并且照明设备的波长不同。通常，在GaN的电子场发射中，在Fowler–Nordheim坐标中观察到具有两个斜率（低电压时较低，高电压时较高）的曲线。仅在曲线的低压部分发现了光照对场发射的影响。在更高的电压下，不带照明和带照明的实验曲线实际上是重合的。由于照明，FN图的低压部分的斜率减小了。这一事实表明由于光引起的电子激发而降低了场发射时的能垒。估计了场和光场发射时的能垒高度。为了解释实验结果，提出了一个基于光，子带隙和能带跃迁的电子激发，以及来自具有不同电子亲和力的不同谷的电子发射的模型。

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