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首页> 外文期刊>Journal of Vacuum Science & Technology >Numerical simulations on capture area of gas molecules for high brightness gas field ion source
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Numerical simulations on capture area of gas molecules for high brightness gas field ion source

机译：高亮度气田离子源气体分子俘获面积的数值模拟

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摘要

The emitter shape dependence of an ion current from a gas field ion source was examined using numerical simulations. A tip shape with a nanoscale protrusion on the apexwas adopted. The results demonstrated that the effective capture area becomes large, when the shank angle is small. For a He gas temperature of 40 K, the effective capture areas of the emitters with the taper half angles of 2° and 15° were estimated to be 0.310 and 0.200 μm~2, respectively. With conditions where the electric field strength and gas pressure are constant, the larger effective capture area leads a larger ion current. The ion currents from the emitters with the taper half angles of 2° and 15° were estimated to be 100 and 67 pA at a He gas pressure of 0.01 Pa, respectively. Therefore, the emitter of the smaller shank angle is capable of emitting the higher ion current. The simulation results showed good agreement with the experimental results.
机译：使用数值模拟检查了来自气体场离子源的离子电流的发射极形状依赖性。采用在尖端具有纳米级突起的尖端形状。结果表明，当柄角较小时，有效捕获面积变大。当氦气温度为40 K时，锥度半角分别为2°和15°的发射器的有效捕获面积估计分别为0.310和0.200μm〜2。在电场强度和气压恒定的条件下，有效捕获面积越大，离子电流越大。在0.01 Pa的He气压下，锥度半角分别为2°和15°的发射极的离子电流估计分别为100和67 pA。因此，较小的柄角的发射器能够发射较高的离子电流。仿真结果与实验结果吻合良好。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第2期|C2A83-C2A89|共7页
  • 作者

    Yasuhiko Sugiyama; Yusuke Kobayashi; Yuuki Morikawa; Kazuo Kajiwara; Koichi Hata;

  • 作者单位

    Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507,Japan Center for Ultimate Technology on Nano-Electronics, Mie University, 1577 Kurima-Machiya,Tsu, Mie 514-8507, Japan SII Nanotechnology Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun,Shizuoka 410-1393, Japan;

    Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507,Japan;

    Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507,Japan;

    Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507,Japan Center for Ultimate Technology on Nano-Electronics, Mie University,1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan;

    Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507,Japan Center for Ultimate Technology on Nano-Electronics, Mie University,1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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