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首页> 外文期刊>Journal of Vacuum Science & Technology >Piezoelectrically driven silicon carbide resonators
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Piezoelectrically driven silicon carbide resonators

机译：压电驱动的碳化硅谐振器

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摘要

Silicon carbide cantilever beam resonators have been designed with top electrodes made of piezoelectric lead zirconium titanate (PZT). The devices have been simulated, fabricated, and tested. Piezoelectric actuation has been performed by applying an alternating actuation voltage to the PZT electrodes, thus inducing vertical displacements. The devices have been fabricated with a beam length of 150 and 200 /tun, and driven into resonance at frequencies in the kilohertz range. The devices' resonance has been detected by monitoring the impedance of the actuating electrode. Simulations and measurements have shown that the electrode length on top of the beam influences the magnitude of the deflection and the resonant frequency of the devices. Furthermore, the electrical feedthrough capacitance presented by the piezoelectric electrode has been observed to strongly influence the output impedance of the resonators. The obtained results show the importance of the electrode design for the optimization of the performance and reliability of piezoelectrically driven resonators.
机译：碳化硅悬臂梁谐振器已设计成顶部电极由压电钛酸锆锆（PZT）制成。这些设备已经过模拟，制造和测试。通过向PZT电极施加交流激励电压来执行压电激励，从而引起垂直位移。装置的光束长度分别为150和200 / tun，并以千赫兹范围的频率驱动产生谐振。通过监视驱动电极的阻抗可以检测到设备的共振。仿真和测量表明，电子束顶部的电极长度会影响器件的偏转幅度和谐振频率。此外，已经观察到由压电电极呈现的馈通电容极大地影响谐振器的输出阻抗。获得的结果表明电极设计对于优化压电驱动谐振器的性能和可靠性的重要性。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6N18-C6N23|共6页
  • 作者

    Enrico Mastropaolo; Isaac Gual; Graham Wood; Andrew Bunting; Rebecca Cheung;

  • 作者单位

    Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom;

    Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom;

    Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom;

    Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom;

    Scottish Microelectronics Centre, The University of Edinburgh, King's Buildings, West Mains Road, Edinburgh EH9 3JF, United Kingdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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