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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Some Peculiarities Of Resist-profile Simulation For Positive-tone Chemically Amplified Resists In Electron-beam Lithography
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Some Peculiarities Of Resist-profile Simulation For Positive-tone Chemically Amplified Resists In Electron-beam Lithography

机译：电子束光刻中正性化学放大抗蚀剂的抗蚀剂轮廓模拟的一些特殊性

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摘要

In the present work, we numerically modeled the processes of exposure and development of the CAMP6 chemically amplified resist during electron-beam lithography. The radial distributions of the absorbed electron energy in the resist for a zero-width δ-function 30 ke V electron beam are obtained by Monte Carlo simulation. These distributions (discrete data) are approximated by an analytical function (sum of double Gaussian and an exponential function). The values of the parameters of the function are calculated using an original Monte Carlo technique, and their dependencies on the resist thickness (d= 100, 200, 600, 1000, and 1500 nm) at two resist depths are presented. Using these parameters' values, we performed a computer simulation of the process of developing the resist taking into account its peculiarities due to the complicated mechanism of resist removal from soluble resist areas. We obtained profiles at various development times of a single 100 nm line.
机译：在目前的工作中，我们对电子束光刻过程中CAMP6化学放大抗蚀剂的曝光和显影过程进行了数值建模。通过蒙特卡罗模拟，获得了零宽度δ函数30 ke V电子束在抗蚀剂中吸收的电子能量的径向分布。这些分布（离散数据）由解析函数（双高斯和指数函数之和）近似。使用原始的蒙特卡洛技术计算该函数的参数值，并给出了它们在两个抗蚀剂深度处对抗蚀剂厚度（d = 100、200、600、1000和1500 nm）的依赖性。使用这些参数的值，考虑到由于从可溶性抗蚀剂区域去除抗蚀剂的复杂机制而引起的特殊性，我们对抗蚀剂的显影过程进行了计算机模拟。我们获得了一条100 nm线在不同显影时间的分布图。

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