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首页> 外文期刊>Journal of Vacuum Science & Technology >Carbon nanotube array vias for interconnect applications
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Carbon nanotube array vias for interconnect applications

机译：用于互连应用的碳纳米管阵列通孔

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摘要

The purpose of this study is to investigate the effect of carbon nanotube (CNT) growth parameters on CNT via resistance and examine the transverse motion of electrons in the CNT bundle vias. Single vias of 3.85 × 3.85 and 2.45 × 2.45 μm~2 correspond to 0.35 × 0.35 μm~2 6 × 6 and 4 × 4 array vias, respectively. With nickel catalyst, CNTs were grown by microwave plasma-enhanced chemical vapor deposition method. Two-terminal CNT via chains of single via and array vias were fabricated on the tantalum metal electrodes. The increase in pretreatment power or substrate temperature resulted in the decrease in CNT diameters and thus the increase in CNT packing density due to the etching effect of exciting hydrogen. This led to the decrease in CNT via resistance owing to more conducting channels. The increase in growth power or substrate temperature enhanced the CNT graphitization and hence yielded the decrease in CNT resistances as well as CNT via resistances. In the same via area, the CNT via resistance of array vias is lower than that of a single via. This could be ascribed to less tube-tube junctions and thus lower electrical resistance in the array vias. Accordingly, the transverse motion of electrons in the CNT bundle vias was demonstrated. Therefore, the integration of CNT array vias with CNT bundles is proposed for optimizing the conductivity of CNT vias in the global interconnects where the via dimensions are more alleviated.
机译：这项研究的目的是研究碳纳米管（CNT）生长参数对碳纳米管通孔电阻的影响，并检查碳纳米管束通孔中电子的横向运动。 3.85×3.85和2.45×2.45μm〜2的单个过孔分别对应于0.35×0.35μm〜2 6×6和4×4阵列过孔。用镍催化剂，通过微波等离子体增强化学气相沉积法生长CNT。在钽金属电极上制作了单通孔和阵列通孔的两端CNT通孔链。预处理功率或基板温度的增加导致CNT直径的减小，并因此由于激发氢的蚀刻作用而导致CNT堆积密度的增加。由于更多的导电通道，这导致CNT通孔电阻的降低。生长能力或基板温度的增加增强了CNT的石墨化作用，因此导致CNT电阻以及CNT via电阻的降低。在相同的通孔区域中，阵列通孔的CNT通孔电阻比单个通孔的电阻低。这可以归因于较少的管-管结，因此阵列通孔中的电阻较低。因此，证明了CNT束通孔中电子的横向运动。因此，提出了将CNT阵列通孔与CNT束集成在一起，以优化全局互连中CNT通孔的电导率，其中通孔尺寸得到了更大的缓解。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2009年第3期|1086-1092|共7页
  • 作者

    Jyh-Hua Ting; Ching-Chieh Chiu; Fuang-Yuan Huang;

  • 作者单位

    National Nano Device Laboratories, No. 26, Prosperity Road I, Science-Based Industry Park, Hsinchu, Taiwan 300, Republic of China;

    Department of Mechanical Engineering, National Central University, 300 Jung-da Road, Jung-li City, Taoyuan, Taiwan 320, Republic of China;

    Department of Mechanical Engineering, National Central University, 300 Jung-da Road, Jung-li City, Taoyuan, Taiwan 320, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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